Effect of ionizing radiation on dual 8-bit analog-to-digital converters (AD9058) with various dose rates and bias conditions

doi:10.1088/1674-1056/22/9/098501

Abstract The radiation effects on several properties (reference voltage, digital output logic voltage, and supply current) of dual 8-bit analog-to-digital (A/D) converters (AD9058) under various biased conditions are investigated in this paper. Gamma ray and 10-MeV proton irradiation are selected for a detailed evaluation and comparison. Based on the measurement results induced by the gamma ray with various dose rates, the devices exhibit enhanced low dose rate sensitivity (ELDRS) under zero and working bias conditions. Meanwhile, it is obvious that the ELDRS is more severe under the working bias condition than under the zero bias condition. The degradation of AD9058 does not display obvious ELDRS during 10-MeV proton irradiation with the selected flux.

Keywords: analog-to-digital converters enhanced low dose rate sensitivities (ELDRS) gamma ray and proton irradiation lower/high-dose rate

Received: 27 December 2012
Revised: 18 March 2013
Accepted manuscript online:

PACS:	85.30.-z	(Semiconductor devices)
	14.20.Dh	(Protons and neutrons)
	61.80.-x	(Physical radiation effects, radiation damage)
	61.80.Ed	(γ-ray effects)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 11205038) and the China Postdoctoral Science Foundation (Grant No. 2012M510951).

Corresponding Authors: Li Xing-Ji
E-mail: lxj0218@hit.edu.cn

Cite this article:

Li Xing-Ji (李兴冀), Liu Chao-Ming (刘超铭), Sun Zhong-Liang (孙中亮), Xiao Li-Yi (肖立伊), He Shi-Yu (何世禹) Effect of ionizing radiation on dual 8-bit analog-to-digital converters (AD9058) with various dose rates and bias conditions 2013 Chin. Phys. B 22 098501

[1]	Li X J, Liu C M, Geng H B, Rui E M, Yang D Z and He S Y 2012 IEEE Trans. Nucl. Sci. 59 439
[2]	Li X J, Liu C M, Rui E M, Geng H B and Yang J Q 2012 IEEE Trans. Nucl. Sci. 59 625
[3]	Li X J, Geng H B, Liu C M, Zhao Z M, Yang D Z and He S Y 2010 IEEE Trans. Nucl. Sci. 57 831
[4]	Liu Z L, Hu Z Y, Zhang Z X, Shao H, Chen M, Bi D W, Ning B X and Zou S C 2011 Chin. Phys. B 20 120703
[5]	Liu Z L, Hu Z Y, Zhang Z X, Shao H, Ning B X, Bi D W, Chen M and Zou S C 2011 Chin. Phys. Lett. 28 070701
[6]	Liu J P, Zhu Y X, Guo W L, Yan W W and Wu G Q 2012 Acta Phys. Sin. 61 137305 (in Chinese)
[7]	Agarwal V and Birkar S D 2005 IEEE Trans. Nucl. Sci. 52 3059
[8]	Lee C I and Johnston A H 1998 IEEE Trans. Nucl. Sci. 45 1444
[9]	Kalashnikov O A, Demidov A A, Figurov V S, Nikiforov A Y, Polevich S A, Telets V A, Maljudin S A and Artamonov A S 1998 IEEE Trans. Nucl. Sci. 45 2611
[10]	Kruckmeyer K, Prater J S, Brown B and Trinh T 2011 IEEE Trans. Nucl. Sci. 58 1023
[11]	Johnston A H, Lee C I and Rax B G 1996 IEEE Trans. Nucl. Sci. 43 3049
[12]	Shaneyfelt M R, Pease R L, Schwank J R and Maher M C 2002 IEEE Trans. Nucl. Sci. 49 3171
[13]	Boch J, Saigne F, Ducret S, Schrimpf R D, Fleetwood D M, Iacconi P and Dusseau L 2004 IEEE Trans. Nucl. Sci. 51 3225
[14]	Pease R L, Gehlausen M, Krieg J, Titus J, Turflinger T, Emily D and Cohn L 1998 IEEE Trans. Nucl. Sci. 45 2665
[15]	Freitag R F and Brown D B 1998 IEEE Trans. Nucl. Sci. 45 2649
[16]	Rui C, Wu L and Ren D Y 2010 Nucl. Sci. Tech. 21 152
[17]	AD9058 datasheet http://www.analog.com/en/analog-to-digital-con-verters/ad-converters/ad9058/products/product.html
[18]	Naylor J R 1978 IEEE Trans. Circuits Syst. 25 526
[19]	Doernberg J, Lee H and Hodges D A 1984 IEEE J. Solid-State Circuits 19 820
[20]	Turflinger T L 1989 IEEE Trans. Nucl. Sci. 36 2356
[21]	IEEE Standard for Terminology and Test Methods for Analog-to-Digital Converters 2000 IEEE Std. 1241
[22]	Lee C I, Rax B G and Johnston A H 1995 IEEE Trans. Nucl. Sci. 42 1681
[23]	Nowlin R N, Enlow E W and Schrimpf R D 1992 IEEE Trans. Nucl. Sci. 39 2026
[24]	Schmidt D M, Wu A and Schrimpf R D 1996 IEEE Trans. Nucl. Sci. 43 3032
[25]	Hong J W, Shin S M and Kang C J 1999 Appl. Phys. Lett. 75 1760
[26]	Liu C M, Li X J, Geng H B, Yang D Z and He S Y 2012 Nucl. Instrum. Meth. Phys. Res. A 670 6
[27]	Messenger S R, Burke E A, Walters R J, Warner J H and Summers G P 2005 Prog. Photovolt. Res. Appl. 13 115

[1]	Reverse gate leakage mechanism of AlGaN/GaN HEMTs with Au-free gate Xin Jiang(蒋鑫), Chen-Hao Li(李晨浩), Shuo-Xiong Yang(羊硕雄), Jia-Hao Liang(梁家豪), Long-Kun Lai(来龙坤), Qing-Yang Dong(董青杨), Wei Huang(黄威),Xin-Yu Liu(刘新宇), and Wei-Jun Luo(罗卫军). Chin. Phys. B, 2023, 32(3): 037201.
[2]	Demonstration and modeling of unipolar-carrier-conduction GaN Schottky-pn junction diode with low turn-on voltage Lijian Guo(郭力健), Weizong Xu(徐尉宗), Qi Wei(位祺), Xinghua Liu(刘兴华), Tianyi Li(李天义), Dong Zhou(周东), Fangfang Ren(任芳芳), Dunjun Chen(陈敦军), Rong Zhang(张荣), Youdou Zheng(郑有炓), and Hai Lu(陆海). Chin. Phys. B, 2023, 32(2): 027302.
[3]	Dynamic modeling of total ionizing dose-induced threshold voltage shifts in MOS devices Guangbao Lu(陆广宝), Jun Liu(刘俊), Chuanguo Zhang(张传国), Yang Gao(高扬), and Yonggang Li(李永钢). Chin. Phys. B, 2023, 32(1): 018506.
[4]	A single dual-mode gas sensor for early safety warning of Li-ion batteries: Micro-scale Li dendrite and electrolyte leakage Wenjun Yan(闫文君), Zhishen Jin(金志燊), Zhengyang Lin(林政扬), Shiyu Zhou(周诗瑜), Yonghai Du(杜永海), Yulong Chen(陈宇龙), and Houpan Zhou(周后盘). Chin. Phys. B, 2022, 31(11): 110704.
[5]	Recent advances in two-dimensional layered and non-layered materials hybrid heterostructures Haixin Ma(马海鑫), Yanhui Xing(邢艳辉), Boyao Cui(崔博垚), Jun Han(韩军), Binghui Wang(王冰辉), and Zhongming Zeng(曾中明). Chin. Phys. B, 2022, 31(10): 108502.
[6]	Improvement on short-circuit ability of SiC super-junction MOSFET with partially widened pillar structure Xinxin Zuo(左欣欣), Jiang Lu(陆江), Xiaoli Tian(田晓丽), Yun Bai(白云), Guodong Cheng(成国栋), Hong Chen(陈宏), Yidan Tang(汤益丹), Chengyue Yang(杨成樾), and Xinyu Liu(刘新宇). Chin. Phys. B, 2022, 31(9): 098502.
[7]	Improved performance of MoS₂ FET by in situ NH₃ doping in ALD Al₂O₃ dielectric Xiaoting Sun(孙小婷), Yadong Zhang(张亚东), Kunpeng Jia(贾昆鹏), Guoliang Tian(田国良), Jiahan Yu(余嘉晗), Jinjuan Xiang(项金娟), Ruixia Yang(杨瑞霞), Zhenhua Wu(吴振华), and Huaxiang Yin(殷华湘). Chin. Phys. B, 2022, 31(7): 077701.
[8]	A 4H-SiC trench MOSFET structure with wrap N-type pillar for low oxide field and enhanced switching performance Pei Shen(沈培), Ying Wang(王颖), and Fei Cao(曹菲). Chin. Phys. B, 2022, 31(7): 078501.
[9]	An electromagnetic simulation assisted small signal modeling method for InP double-heterojunction bipolar transistors Yanzhe Wang(王彦喆), Wuchang Ding(丁武昌), Yongbo Su(苏永波), Feng Yang(杨枫),Jianjun Ding(丁建君), Fugui Zhou(周福贵), and Zhi Jin(金智). Chin. Phys. B, 2022, 31(6): 068502.
[10]	Analysis of the generation mechanism of the S-shaped J—V curves of MoS₂/Si-based solar cells He-Ju Xu(许贺菊), Li-Tao Xin(辛利桃), Dong-Qiang Chen(陈东强), Ri-Dong Cong(丛日东), and Wei Yu(于威). Chin. Phys. B, 2022, 31(3): 038503.
[11]	A 4H-SiC merged P-I-N Schottky with floating back-to-back diode Wei-Zhong Chen(陈伟中), Hai-Feng Qin(秦海峰), Feng Xu(许峰), Li-Xiang Wang(王礼祥), Yi Huang(黄义), and Zheng-Sheng Han(韩郑生). Chin. Phys. B, 2022, 31(2): 028503.
[12]	Observation of source/drain bias-controlled quantum transport spectrum in junctionless silicon nanowire transistor Yang-Yan Guo(郭仰岩), Wei-Hua Han(韩伟华), Xiao-Di Zhang(张晓迪), Jun-Dong Chen(陈俊东), and Fu-Hua Yang(杨富华). Chin. Phys. B, 2022, 31(1): 017701.
[13]	Impact of symmetric gate-recess length on the DC and RF characteristics of InP HEMTs Ruize Feng(封瑞泽), Bo Wang(王博), Shurui Cao(曹书睿), Tong Liu(刘桐), Yongbo Su(苏永波), Wuchang Ding(丁武昌), Peng Ding(丁芃), and Zhi Jin(金智). Chin. Phys. B, 2022, 31(1): 018505.
[14]	Heterogeneous integration of InP HEMTs on quartz wafer using BCB bonding technology Yan-Fu Wang(王彦富), Bo Wang(王博), Rui-Ze Feng(封瑞泽), Zhi-Hang Tong(童志航), Tong Liu(刘桐), Peng Ding(丁芃), Yong-Bo Su(苏永波), Jing-Tao Zhou(周静涛), Feng Yang(杨枫), Wu-Chang Ding(丁武昌), and Zhi Jin(金智). Chin. Phys. B, 2022, 31(1): 018502.
[15]	Improved 4H-SiC UMOSFET with super-junction shield region Pei Shen(沈培), Ying Wang(王颖), Xing-Ji Li(李兴冀), Jian-Qun Yang(杨剑群), Cheng-Hao Yu(于成浩), and Fei Cao(曹菲). Chin. Phys. B, 2021, 30(5): 058502.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Effect of ionizing radiation on dual 8-bit analog-to-digital converters (AD9058) with various dose rates and bias conditions

Cite this article:

Online attention