Modeling of conducting bridge evolution in bipolar vanadium oxide-based resistive switching memory

doi:10.1088/1674-1056/22/9/097101

Abstract We investigate the resistive switching characteristics of a Cu/VO_x/W structure. The VO_x film is deposited by radio-frequency magnetron sputtering on the Cu electrode as a dielectric layer. The prepared VO_x sample structure shows reproducible bipolar resistive switching characteristics with ultra-low switching voltage and good cycling endurance. A modified physical model is proposed to elucidate the typical switching behavior of the vanadium oxide-based resistive switching memory with a sudden resistance transition, and the self-saturation of reset current as a function of compliance current is observed in the test, which is attributed to the growth pattern of the conducting filaments. Additionally, the related conducting mechanism is discussed in detail.

Keywords: resistive switching vanadium oxide conducting filament magnetron sputtering

Received: 29 January 2013
Revised: 04 March 2013
Accepted manuscript online:

PACS:	71.30.+h	(Metal-insulator transitions and other electronic transitions)
	85.30.-z	(Semiconductor devices)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61274113 and 11204212), the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-11-1064), the Natural Science Foundation of Tianjin City, China (Grant Nos. 10SYSYJC27700, 13JCYBJC15700, and 10ZCKFGX01200), and the Science and Technology Development Funds of Universities and Colleges of Tianjin City, China (Grant No. 20100703).

Corresponding Authors: Wang Fang
E-mail: fwang75@163.com

Cite this article:

Zhang Kai-Liang (张楷亮), Liu Kai (刘凯), Wang Fang (王芳), Yin Fu-Hong (尹富红), Wei Xiao-Ying (韦晓莹), Zhao Jin-Shi (赵金石) Modeling of conducting bridge evolution in bipolar vanadium oxide-based resistive switching memory 2013 Chin. Phys. B 22 097101

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Modeling of conducting bridge evolution in bipolar vanadium oxide-based resistive switching memory

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