Enhanced performance of InGaN/GaN multiple quantum well solar cells with double indium content

doi:10.1088/1674-1056/22/8/088401

Abstract The performance of a multiple quantum well (MQW) InGaN solar cell with double indium content is investigated. It is found that the adoption of a double indium structure can effectively broaden the spectral response of the external quantum efficiencies and optimize the overall performance of the solar cell. Under AM1.5G illumination, the short-circuit current density (J_sc) and conversion efficiency of the solar cell are enhanced by 65% and 13% compared with those of a normal single-indium-content MQW solar cell. These improvements are mainly attributed to the expansion of the absorption spectrum and better extraction efficiency of the photon-generated carriers induced by higher polarization.

Keywords: metal-organic chemical vapor deposition GaN-based solar cells InGaN/GaN multiple quantum wells

Received: 18 December 2012
Revised: 18 January 2013
Published: 27 June 2013

PACS:	84.60.Jt	(Photoelectric conversion)
	85.35.Be	(Quantum well devices (quantum dots, quantum wires, etc.))
	85.30.De	(Semiconductor-device characterization, design, and modeling)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 51172079), the Science and Technology Program of Guangdong Province, China (Grant Nos. 2010B090400456 and 2010A081002002), and the Science and Technology Program of Guangzhou City, China (Grant No. 2011J4300018).

Corresponding Authors: Li Shu-Ti
E-mail: lishuti@scnu.edu.cn

Cite this article:

Zhao Bi-Jun, Chen Xin, Ren Zhi-Wei, Tong Jin-Hui, Wang Xing-Fu, Li Dan-Wei, Zhuo Xiang-Jing, Zhang Jun, Yi Han-Xiang, Li Shu-Ti Enhanced performance of InGaN/GaN multiple quantum well solar cells with double indium content 2013 Chin. Phys. B 22 088401

[1]	Muth J, Lee J, Shmagin I, Kolbas R, Casey J H, Keller B, Mishra U and DenBaars S 1997 Appl. Phys. Lett. 71 2572
[2]	Singh R, Doppalapudi D, Moustakas T and Romano L 1997 Appl. Phys. Lett. 70 1089
[3]	David A and Grundmann M 2010 Appl. Phys. Lett. 97 033501
[4]	Tong J T, Li S T, Liu T P, Liu C, Wang H L, Wu L J, Zhao B J, Wang X F and Chen X 2012 Chin. Phys. B 21 118502
[5]	Lu T P, Li S T, Zhang K, Liu C, Xiao G W, Zhou Y G, Zheng S W, Yin Y A, Wu L J, Wang H L and Yang X D 2011 Chin. Phys. B 20 098503
[6]	Wu L J, Li S T, Liu C, Wang H L, Lu T P, Zhang K, Xiao G W, Zhou Y G, Zheng S W, Yin Y A and Yang X D 2012 Chin. Phys. B 21 068506
[7]	Davydov V Y, Klochikhin A A, Seisyan R P, Emtsev V V, Ivanov S V, Bechstedt F, Furthmuller J, Harima H, Mudryi V, Aderhold J, Semchinova O and Graul J 2002 Phys. Status Solidi B 229 R1
[8]	Wu J, Walukiewicz W, Yu K M, Shan W, Ager J W, Haller E E, Lu H, Schaff W J, Metzger W K and Kurtz S 2003 J. Appl. Phys. 94 6477
[9]	Xiao H L, Wang X L, Wang J X, Zhang N H, Liu H X, Zeng Y P, Li J M and Wang Z G 2005 J. Crystals Growth 276 401
[10]	Wu J, Walukiewicz W, Yu K M, Ager III J W, Haller E E, Lu H and Schaff W J 2002 Appl. Phys. Lett. 80 4741
[11]	Nanishi Y, Saito Y and Yamaguchi T 2003 Jpn. J. Appl. Phys. 42 2549
[12]	Wu J Q 2009 Appl. Phys. 106 011101
[13]	De Vos A 1992 Endoreversible Thermodynamics of Solar Energy Conversion (Oxford: Oxford University Press) p. 90
[14]	Friedman D J 2010 Curr. Solid State Mater. Sci. 14 131
[15]	Holec D, Costa P M F J, Kappers M J and Humphreys C J 2007 J. Crystals Growth 303 314
[16]	Zhang X B, Wang X L, Xiao H L, Yang C B, Hou Q F, Yin H B, Chen H and Wang Z G 2011 Chin. Phys. B 20 028402
[17]	Dahal R, Pantha B, Li J, Lin J Y and Jiang H X 2009 Appl. Phys. Lett. 94 063505
[18]	Deng Q W, Wang X L, Xiao H L, Wang C M, Yin H B, Hong C, Hou Q F, Lin D F, Li J M, Wang Z G and Hou X 2011 J. Phys. D: Appl. Phys. 44 265103
[19]	Dahal R, Li J, Aryal K, Lin J Y and Jiang H X 2010 Appl. Phys. Lett. 97 073115
[20]	Sheu J K, Yang C C, Tu S T, Chang K H, Ming Lee L, Lai W C and Peng L C 2009 IEEE Electron. Dev. Lett. 30 225
[21]	Brown G F, Ager III J W, Walukiewicz W and Wu J 2010 Sol. Energy Mater. Sol. Cells 94 478
[22]	Chang J Y, Liou B T, Lin H W, Shih Y H, Chang S H and Kuo Y K 2011 Opt. Lett. 36 3500
[23]	Rimada J C, Hernandez L, Connolly J P and Barnham K W J 2007 Microelectron. J. 38 513
[24]	Yang C C, Sheu J K, Liang X W, Huang M S, Lee M L, Chang K H, Tu S J, Huang F W and Lai W C 2010 Appl. Phys. Lett. 97 021113

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