Angular dependence of multiple-bit upset response in static random access memories under heavy ion irradiation

doi:10.1088/1674-1056/22/8/086102

Abstract Experimental evidence is presented relevant to the angular dependences of multiple-bit upset (MBU) rates and patterns in static random access memories (SRAMs) under heavy ion irradiation. The single event upset (SEU) cross sections under tilted ion strikes are overestimated by 23.9%-84.6%, compared with under normally incident ion with the equivalent linear energy transfer (LET) value of ～ 41 MeV/(mg/cm²), which can be partially explained by the fact that the MBU rate for tilted ions of 30° is 8.5%-9.8% higher than for normally incident ions. While at a lower LET of ～ 9.5 MeV/(mg/cm²), no clear discrepancy is observed. Moreover, since the ion trajectories at normal and tilted incidences are different, the predominant double-bit upset (DBU) patterns measured are different in both conditions. Those differences depend on the LET values of heavy ions and devices under test. Thus, effective LET method should be used carefully in ground-based testing of single event effects (SEE) sensitivity, especially in MBU-sensitive devices.

Keywords: single event effects effective LET method multiple-bit upset upset cross section

Received: 31 October 2012
Revised: 15 January 2013
Accepted manuscript online:

PACS:	61.82.Fk	(Semiconductors)
	25.70.Bc	(Elastic and quasielastic scattering)
	85.30.Tv	(Field effect devices)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 11179003, 10975164, 10805062, and 11005134).

Corresponding Authors: Liu Jie
E-mail: j.liu@impcas.ac.cn

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Zhang Zhan-Gang (张战刚), Liu Jie (刘杰), Hou Ming-Dong (侯明东), Sun You-Mei (孙友梅), Su Hong (苏弘), Duan Jing-Lai (段敬来), Mo Dan (莫丹), Yao Hui-Jun (姚会军), Luo Jie (罗捷), Gu Song (古松), Geng Chao (耿超), Xi Kai (习凯) Angular dependence of multiple-bit upset response in static random access memories under heavy ion irradiation 2013 Chin. Phys. B 22 086102

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Angular dependence of multiple-bit upset response in static random access memories under heavy ion irradiation

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