Interfacial characteristics of Al/Al2O3/ZnO/n-GaAs MOS capacitor

doi:10.1088/1674-1056/22/7/076701

Abstract The interfacial characteristics of Al/Al₂O₃/ZnO/n-GaAs metal-oxide-semiconductor (MOS) capacitor are investigated. The results measured by X-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy (HRTEM) show that the presence of ZnO can effectively suppress the formations of oxides at the interface between the GaAs and gate dielectric and gain smooth interface. The ZnO-passivated GaAs MOS capacitor exhibits a very small hysteresis and frequency dispersion. Using the Terman method, the interface trap density is extracted from C-V curves. It is found that the ZnO layer can effectively improve the interface quality.

Keywords: gate dielectric Terman method interface trap density

Received: 27 August 2012
Revised: 12 March 2013
Accepted manuscript online:

PACS:	67.30.hp	(Interfaces)
	68.37.-d	(Microscopy of surfaces, interfaces, and thin films)
	61.72.uj	(III-V and II-VI semiconductors)

Fund: Project supported by the National Basic Research Program of China (Grant No. 2010CB327505), the National Defense Advance Research Foundation, China(Grant No. 9140A08030511DZ111), and the National Defense Advance Research Project, China (Grant No. 51308030306).

Corresponding Authors: Liu Chen
E-mail: lcxd710071@126.com

Cite this article:

Liu Chen (刘琛), Zhang Yu-Ming (张玉明), Zhang Yi-Men (张义门), Lü Hong-Liang (吕红亮) Interfacial characteristics of Al/Al₂O₃/ZnO/n-GaAs MOS capacitor 2013 Chin. Phys. B 22 076701

[1]	Li C, Zhuang Y Q, Zhang L and Bao J L 2012 Chin. Phys. B 21 048501
[2]	Chen Y T, Huang P, Jimmy L, Patrick S and Veksler D 2012 International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA), April 23-25, 2012, Hsinchu, Taiwan, p. 1
[3]	Shahrjerdi D, Tutuc E and Banerjee S K 2007 Appl. Phys. Lett. 91 3503
[4]	Guo D F, Geng W G, Lan W, Huang C M and Wang Y Y 2005 Acta Phys. Sin. 54 5901 (in Chinese)
[5]	Xu J P, Chen W B, Lai P T, Li Y P and Chan C L 2007 Chin. Phys. 16 529
[6]	Passlack M, Medendorp N, Gregory R and Braddock D 2003 Appl. Phys. Lett. 83 5262
[7]	Shahrjerdi D, Oye M M, Holmes A L Jr and Banerjee S K 2006 Appl. Phys. Lett. 89 3501
[8]	Gao F, Lee S J, Chi D Z, Balakumar S and Kwong D L 2007 Appl. Phys. Lett. 90 2904
[9]	Dalapati G K, Sridhara A, Wong A S W, Chia C K, Lee S J and Chi D 2007 Appl. Phys. Lett. 91 2101
[10]	Brennan B, Zhernokletov D M, Dong H, Hinkle C L, Kim J and Wallace R M 2012 Appl. Phys. Lett. 100 1603

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Interfacial characteristics of Al/Al₂O₃/ZnO/n-GaAs MOS capacitor