| PHYSICS OF GASES, PLASMAS, AND ELECTRIC DISCHARGES |
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The effects of process conditions on the plasma characteristic in radio-frequency capacitively coupled SiH4/NH3/N2 plasmas: Two-dimensional simulations |
| Liu Xiang-Mei (刘相梅)a, Song Yuan-Hong (宋远红)b, Jiang Wei (姜巍)a, Yi Lin (易林)a |
a School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China;
b School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, China |
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Abstract A two-dimensional (2D) fluid model is presented to study the behavior of silicon plasma mixed with SiH4, N2, and NH3 in radio-frequency capacitively coupled plasma (CCP) reactor. The plasma-wall interaction (including the deposition) is modeled by using surface reaction coefficients. In the present paper we try to identify, by numerical simulations, the effect of variations of the process parameters on the plasma properties. It is found from our simulations that by increasing the gas pressure and the discharge gap, the electron density profile shape changes continuously from an edge-high to a center-high, thus the thin films become more uniform. Moreover, as the N2/NH3 ratio increases from 6/13 to 10/9, the hydrogen content can be significantly decreased, without decreasing significantly the electron density.
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Received: 16 July 2012
Revised: 18 September 2012
Accepted manuscript online:
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PACS:
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52.65.-y
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(Plasma simulation)
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52.25.-b
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(Plasma properties)
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52.80.Pi
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(High-frequency and RF discharges)
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| Fund: Project supported by China Postdoctoral Science Foundation (Grant No. 2012M511603), the National Natural Science Foundation of China (Grant Nos. 11105057 and 10775025), the Natural Science Foundation of Hubei Province of China (Grant No. 2007ABA035), and the Program for New Century Excellent Talents in University of China (Grant No. NCET-08-0073). |
Corresponding Authors:
Yi Lin
E-mail: yilin@mail.hust.edu.cn
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Cite this article:
Liu Xiang-Mei (刘相梅), Song Yuan-Hong (宋远红), Jiang Wei (姜巍), Yi Lin (易林) The effects of process conditions on the plasma characteristic in radio-frequency capacitively coupled SiH4/NH3/N2 plasmas: Two-dimensional simulations 2013 Chin. Phys. B 22 045204
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