Effects of rapid thermal annealing on the morphology and optical properity of ultrathin InSb film deposited on SiO2/Si substrate

doi:10.1088/1674-1056/22/2/027802

Abstract Ultrathin InSb thin films on SiO₂/Si substrates are prepared by radio frequency (RF) magnetron sputtering and rapid thermal annealing (RTA) at 300, 400, and 500℃, respectively. X-ray diffraction (XRD) indicates that InSb film treated by RTA at 500℃, which is higher than its melting temperature (about 485℃), shows a monocrystalline-like feature. High-resolution transmission electron microscopy (HRTEM) micrograph shows that melt recrystallization of InSb film on SiO₂/Si(111) substrate is along the (111) planes. The transmittances of InSb films decrease and the optical band gaps redshift from 0.24 eV to 0.19 eV with annealing temperature increasing from 300℃ to 500℃, which is indicated by Fourier transform infrared spectroscopy (FTIR) measurement. The observed changes demonstrate that RAT is a viable technique for improving characteristics of InSb films, especially the melt-recrystallized film treated by RTA at 500℃.

Keywords: XOI solid-phase recrystallization rapid thermal annealing

Received: 11 May 2012
Revised: 25 July 2012
Accepted manuscript online:

PACS:	78.40.Fy	(Semiconductors)
	43.35.Ns	(Acoustical properties of thin films)
	68.60.Bs	(Mechanical and acoustical properties)

Fund: Project supported by the Special Funds for State 11th Five-Year Basic Research Project of China (Grant No. 51318060207).

Corresponding Authors: Li Deng-Yue
E-mail: dyli2012@126.com

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Li Deng-Yue (李邓玥), Li Hong-Tao (李洪涛), Sun He-Hui (孙合辉), Zhao Lian-Cheng (赵连城 ) Effects of rapid thermal annealing on the morphology and optical properity of ultrathin InSb film deposited on SiO₂/Si substrate 2013 Chin. Phys. B 22 027802

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Effects of rapid thermal annealing on the morphology and optical properity of ultrathin InSb film deposited on SiO2/Si substrate

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Effects of rapid thermal annealing on the morphology and optical properity of ultrathin InSb film deposited on SiO₂/Si substrate