An AlGaN/GaN HEMT with enhanced breakdown and near-zero breakdown voltage temperature coefficient

doi:10.1088/1674-1056/22/2/026103

Abstract An AlGaN/GaN high-electron mobility transistor (HEMT) with a novel source-connected air-bridge field plate (AFP) is experimentally verified. The device features a metal field plate that jumps from the source over the gate region and lands between the gate and drain. When compared to a similar size HEMT device with conventional field plate (CFP) structure, the AFP not only minimizes the parasitic gate to source capacitance, but also exhibits higher OFF-state breakdown voltage and one order of magnitude lower drain leakage current. In a device with a gate to drain distance of 6 μm and a gate length of 0.8 μm, three times higher forward blocking voltage of 375 V was obtained at V_GS=-5 V. In contrast, a similar sized HEMT with CFP can only achieve a breakdown voltage no higher than 125 V using this process, regardless of device dimensions. Moreover, a temperature coefficient of 0 V/K for the breakdown voltage is observed. However, devices without field plate (no FP) and with optimized conventional field plate (CFP) exhibit breakdown voltage temperature coefficients of -0.113 V/K and -0.065 V/K, respectively.

Keywords: AlGaN/GaN high-electron mobility transistor air-bridge field plate breakdown voltage breakdown voltage temperature coefficient

Received: 16 August 2012
Revised: 10 September 2012
Accepted manuscript online:

PACS:	61.72.uj	(III-V and II-VI semiconductors)
	71.20.N
	51.50.+v	(Electrical properties)

Fund: Project supported by the Delta Science & Technology Educational Development Program (Grant No. DREK2010001) and the Zhejiang Provincial Natural Science Foundation of China for Distinguished Young Scholars (Grant No. R1100468).

Corresponding Authors: Sheng Kuang
E-mail: shengk@zju.edu.cn

Cite this article:

Xie Gang (谢刚), Tang Cen (汤岑), Wang Tao (汪涛), Guo Qing (郭清), Zhang Bo (张波), Sheng Kuang (盛况), Wai Tung Ng An AlGaN/GaN HEMT with enhanced breakdown and near-zero breakdown voltage temperature coefficient 2013 Chin. Phys. B 22 026103

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An AlGaN/GaN HEMT with enhanced breakdown and near-zero breakdown voltage temperature coefficient

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