Degradation and recovery properties of AlGaN/GaN high-electron mobility transistors under direct current reverse step voltage stress

doi:10.1088/1674-1056/22/2/027201

Abstract Direct current (DC) reverse step voltage stress is applied on the gate of AlGaN/GaN high-electron mobility transistor (HEMT). Experiments show that parameters degenerate under stress. Large-signal parasitic source/drain resistance (R_S/R_D) and gate-source forward I-V characteristics are recoverable after breakdown of the device under test (DUT). Electrons trapped by both the AlGaN barrier trap and the surface state under stress lead to this phenomenon, and surface state recovery is the major reason for the recovery of device parameters.

Keywords: high-electron mobility transistor surface state trap recovery

Received: 16 July 2012
Revised: 31 July 2012
Accepted manuscript online:

PACS:	72.20.Jv	(Charge carriers: generation, recombination, lifetime, and trapping)
	73.61.Ey	(III-V semiconductors)
	73.20.At	(Surface states, band structure, electron density of states)

Fund: Project supported by the Key Science and Technology Foundation of Guangdong Province, China (Grant Nos. 2011A080801005 and 2010A080802001) and the Guiding Project on the Integration of Industry, Education and Research of Guangdong Province, China (Grant No. 00802440123641045); and the Strategic Emerging Industries, the Special Fund for LED Industry Projects of Guangdong Province, China (Grant No. 2012A080304003).

Corresponding Authors: Feng Shi-Wei
E-mail: shwfeng@bjut.edu.cn

Cite this article:

Shi Lei (石磊), Feng Shi-Wei (冯士维), Guo Chun-Sheng (郭春生), Zhu Hui (朱慧), Wan Ning (万宁) Degradation and recovery properties of AlGaN/GaN high-electron mobility transistors under direct current reverse step voltage stress 2013 Chin. Phys. B 22 027201

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Degradation and recovery properties of AlGaN/GaN high-electron mobility transistors under direct current reverse step voltage stress

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