Interlayer transport of electron in bilayer graphene with phonon-induced lattice distortion in the presence of biased potential

doi:10.1088/1674-1056/22/1/017201

Abstract The interlayer transport of electron in bilayer graphene influenced by phonon in the presence of biased potential is investigated using the tight-binding approach. The in-plane optical mode E_2g and out-of-plane optical mode B_1g associated with the applied biased potential are considered to compute and discuss the interlayer transport probability of an electron initially localized on the bottom layer at the Dirac point in the Brillouin zone. Without the biased potential, the interlayer transport probability is equal to 0.5 regardless of the phonon displacement except for a few special cases. Applying a biased potential to the layers, we find that in different phonon mode the function of the transport probability with respect to applied biased potential and phonon displacement is complex and various, but on the whole the transport probability decreases with the increase in the absolute value of the applied biased potential. These phenomena are discussed in detail in this paper.

Keywords: electronic transport conductivity of specific materials

Received: 10 April 2012
Revised: 28 June 2012
Accepted manuscript online:

PACS:	72.10.Di	(Scattering by phonons, magnons, and other nonlocalized excitations)
	72.80.-r	(Conductivity of specific materials)

Fund: Project supported by the Department of Education of Guangxi, China (Grant No. 200911MS78).

Corresponding Authors: He Liang-Ming
E-mail: hlm66225@sohu.com

Cite this article:

He Liang-Ming (何良明) Interlayer transport of electron in bilayer graphene with phonon-induced lattice distortion in the presence of biased potential 2013 Chin. Phys. B 22 017201

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Interlayer transport of electron in bilayer graphene with phonon-induced lattice distortion in the presence of biased potential

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