Compatibility and optoelectronic of ZnSe nano crystalline thin film

doi:10.1088/1674-1056/21/9/097303

Abstract We report the room temperature synthesis of zinc selenide (ZnSe) nano crystalline thin film on quartz by using a relatively simple and low cost closed space sublimation process (CSSP). The compatibility of the prepared thin films for optoelectronic applications was assessed by X-ray diffraction (XRD), atomic force microscope (AFM), scanning electron microscope (SEM), Raman spectroscopy, photoluminescence, and Fourier transform infrared spectroscopy (FT-IR). The XRD confirmed that the films were polycrystalline with the preferential orientation along the (111) plane corresponding to the cubic phase (2θ = 27.28°). The AFM indicated that the ZnSe film presented a smooth and compact morphology with RMS roughness 19.86 nm. The longitudinal optical phonon modes were observed at 247 cm^-1 and 490 cm^-1 attributed to the cubic structured ZnSe. The Zn-Se stretching band was confirmed by the FT-IR. The microstructure and compositional analysis was made with the SEM. The grain size, dislocation density, and strain calculated were co-related. All these properties manifested a good quality, high stability, finely adhesive, and closely packed structured ZnSe thin film for optoelectronic applications.

Keywords: thin film Raman spectroscopy

Received: 26 August 2011
Revised: 12 June 2012
Accepted manuscript online:

PACS:	73.61.Ga	(II-VI semiconductors)
	74.25.nd	(Raman and optical spectroscopy)
	78.30.Fs	(III-V and II-VI semiconductors)

Corresponding Authors: Taj Muhammad Khan
E-mail: tajakashne@gmail.com

Cite this article:

Taj Muhammad Khan, Tayyaba BiBi Compatibility and optoelectronic of ZnSe nano crystalline thin film 2012 Chin. Phys. B 21 097303

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Compatibility and optoelectronic of ZnSe nano crystalline thin film

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