Monolithic integration of AlGaN/GaN metal–insulator field-effect transistor with ultra-low voltage-drop diode for self-protection

doi:10.1088/1674-1056/21/8/087305

Abstract In this paper, we present a monolithic integration of self-protected AlGaN/GaN metal-insulator field-effect transistor (MISFET). An integrated field-controlled diode on the drain side of the AlGaN/GaN MISFET features self-protected function at reverse bias. This diode takes advantage of the recessed-barrier enhancement-mode technique to realize an ultra-low voltage drop and a low turn-ON voltage. In the smart monolithic integration, this integrated diode can block reverse bias (>70 V/μm) and suppress the leakage current (<5×10^-11 A/mm). Compared with conventional monolithic integration, the numerical results show that the MISFET integrated with a field-controlled diode leads to a good performance for smart power integration. And the power loss is lower than 50% in conduction without forward current degeneration.

Keywords: AlGaN/GaN AlGaN/GaN heterostructures metal-insulator field-effect transistor field-controlled diode

Received: 11 December 2011
Revised: 16 February 2012
Accepted manuscript online:

PACS:	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	73.61.Ey	(III-V semiconductors)
	71.55.Eq	(III-V semiconductors)
	77.22.Ch	(Permittivity (dielectric function))

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60906037), the Fundamental Research Funds for the Central Universities, China (Grant No. ZYGX2009J027), and the Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices.

Corresponding Authors: Wang Zhi-Gang
E-mail: Power GaN@126.com

Cite this article:

Wang Zhi-Gang (汪志刚), Chen Wan-Jun (陈万军), Zhang Jing (张竞), Zhang Bo (张波), Li Zhao-Ji (李肇基 ) Monolithic integration of AlGaN/GaN metal–insulator field-effect transistor with ultra-low voltage-drop diode for self-protection 2012 Chin. Phys. B 21 087305

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Monolithic integration of AlGaN/GaN metal–insulator field-effect transistor with ultra-low voltage-drop diode for self-protection

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