Fabrication and optical properties of InGaN/GaN multiple quantum well light emitting diodes with amorphous BaTiO3 ferroelectric film

doi:10.1088/1674-1056/21/6/067702

Abstract BaTiO₃ (BTO) ferroelectric thin films are prepared by the sol-gel method. The fabrication and the optical properties of an InGaN/GaN multiple quantum well light emitting diode (LED) with amorphous BTO ferroelectric thin film are studied. The photoluminescence (PL) of the BTO ferroelectric film is attributed to the structure. The ferroelectric film which annealed at 673 K for 8 h has the better PL property. The peak width is about 30 nm from 580 nm to 610 nm, towards the yellow region. The mixed electroluminescence (EL) spectrum of InGaN/GaN multiple quantum well LED with 150-nm thick amorphous BTO ferroelectric thin film displays the blue-white light. The Commission Internationale De L'Eclairage (CIE) coordinate of EL is (0.2139, 0.1627). EL wavelength and intensity depends on the composition, microstructure and thickness of the ferroelectric thin film. The transmittance of amorphous BTO thin film is about 93% at a wavelength of 450 nm-470 nm. This means the amorphous ferroelectric thin films can output more blue-ray and emission lights. In addition, the amorphous ferroelectric thin films can be directly fabricated without a binder and used at higher temperatures (200 ℃-400 ℃). It is very favourable to simplify the preparation process and reduce the heat dissipation requirements of an LED. This provides a new way to study LEDs.

Keywords: InGaN/GaN multiple quantum well light emitting diodes ferroelectric film BaTiO₃ optical properties

Received: 08 December 2011
Revised: 05 February 2012
Accepted manuscript online:

PACS:	77.84.-s	(Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials)
	78.20.-e	(Optical properties of bulk materials and thin films)
	81.16.Be	(Chemical synthesis methods)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61076042 and 60607006), the Special Project on Development of National Key Scientific Instruments and Equipment of China (Grant No. 2011YQ16000205), and the National High Technology Research and Development Program of China (Grant No. 2011AA03A106).

Corresponding Authors: Peng Jing
E-mail: jingmathfly@yahoo.com.cn

Cite this article:

Peng Jing(彭静), Wu Chuan-Ju(吴传菊), Shen Tang-You(孙堂友), Zhao Wen-Ning(赵文宁), Wu Xiao-Feng(吴小锋), Liu Wen(刘文) Wang Shuang-Bao(王双保), Jie Quan-Lin(揭泉林), and Xu Zhi-Mou(徐智谋) Fabrication and optical properties of InGaN/GaN multiple quantum well light emitting diodes with amorphous BaTiO₃ ferroelectric film 2012 Chin. Phys. B 21 067702

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Fabrication and optical properties of InGaN/GaN multiple quantum well light emitting diodes with amorphous BaTiO3 ferroelectric film

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Fabrication and optical properties of InGaN/GaN multiple quantum well light emitting diodes with amorphous BaTiO₃ ferroelectric film