Improving lithographic masks with the assistance of indentations

doi:10.1088/1674-1056/21/5/057301

Abstract Indentations etched on the output surface of a metallic mask are proposed to produce fine lithographic patterns with a resolution of 500 nm using the finite-difference time domain (FDTD) method. Such a designed mask is capable of enhancing near field lithography (NFL) resolution more than three times compared with the structure without indentations. The simulation results show that the interference disturbance between the adjacent lithographic channels can be eliminated efficiently by employing the indentations. As a straightforward consequence, the channel-to-channel interspaces can be shortened significantly, maintaining a uniform field distribution and high contrast.

Keywords: surface plasmons lithography finite-difference time domain (FDTD) method

Received: 03 September 2011
Revised: 27 April 2012
Accepted manuscript online:

PACS:	73.20.Mf	(Collective excitations (including excitons, polarons, plasmons and other charge-density excitations))
	42.82.Cr	(Fabrication techniques; lithography, pattern transfer)
	02.60.Cb	(Numerical simulation; solution of equations)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 10974025).

Cite this article:

Guo Ying-Nan(郭英楠), Li Xu-Feng(李旭峰), Pan Shi(潘石), Wang Qiao(王乔), Wang Shuo(王硕), and Wu Yong-Kuan(吴永宽) Improving lithographic masks with the assistance of indentations 2012 Chin. Phys. B 21 057301

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