New insight into the parasitic bipolar amplification effect in single event transient production

doi:10.1088/1674-1056/21/1/016103

Abstract In this paper, a new method is proposed to study the mechanism of charge collection in single event transient (SET) production in 90 nm bulk complementary metal oxide semiconductor (CMOS) technology. We find that different from the case in the pMOSFET, the parasitic bipolar amplification effect (bipolar effect) in the balanced inverter does not exist in the nMOSFET after the ion striking. The influence of the substrate process on the bipolar effect is also studied in the pMOSFET. We find that the bipolar effect can be effectively mitigated by a buried deep P⁺-well layer and can be removed by a buried SO₂ layer.

Keywords: parasitic bipolar amplification effect (bipolar effect) single event transient substrate process

Received: 11 May 2011
Revised: 29 July 2011
Accepted manuscript online:

PACS:	61.80.Jh	(Ion radiation effects)
	85.30.Tv	(Field effect devices)
	85.30.Pq	(Bipolar transistors)

Fund: Project supported by the Key Program of the National Natural Science Foundation of China (Grant No. 60836004) and the National Natural Science Foundation of China (Grant Nos. 61006070 and 61076025).

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Chen Jian-Jun(陈建军), Chen Shu-Ming(陈书明), Liang Bin(梁斌), and Deng Ke-Feng (邓科峰) New insight into the parasitic bipolar amplification effect in single event transient production 2012 Chin. Phys. B 21 016103

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