PEDOT:PSS Schottky contacts on annealed ZnO films

doi:10.1088/1674-1056/20/4/047301

Abstract Polycrystalline ZnO and ITO films on SiO₂ substrates are prepared by radio frequency (RF) reactive magnetron sputtering. Schottky contacts are fabricated on ZnO films by spin coating with a high conducting polymer, poly(3, 4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) as the metal electrodes. The current–voltage measurements for samples on unannealed ZnO films exhibit rectifying behaviours with a barrier height of 0.72 eV (n=1.93). The current for the sample is improved by two orders of magnitude at 1 V after annealing ZnO film at 850 oC, whose barrier height is 0.75 eV with an ideality factor of 1.12. X-ray diffraction, atomic force microscopy and scanning electron microscopy are used to study the properties of the PEDOT:PSS/ZnO/ITO/SiO₂. The results are useful for applications such as metal–semiconductor field-effect transistors and UV photodetectors.

Keywords: Schottky contacts rectifying characteristic annealed ZnO film

Received: 12 October 2010
Revised: 07 December 2010
Accepted manuscript online:

PACS:	73.40.Sx	(Metal-semiconductor-metal structures)
	73.61.Ga	(II-VI semiconductors)
	73.50.-h	(Electronic transport phenomena in thin films)

Fund: Project supported by the Fundamental Research Funds for the Central Universities of China (Grant No. 2009JBM098).

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Zhu Ya-Bin(朱亚彬), Hu Wei(胡伟), Na Jie(纳杰), He Fan(何帆), Zhou Yue-Liang(周岳亮), and Chen Cong(陈聪) PEDOT:PSS Schottky contacts on annealed ZnO films 2011 Chin. Phys. B 20 047301

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PEDOT:PSS Schottky contacts on annealed ZnO films

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