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Chin. Phys. B, 2010, Vol. 19(9): 097801    DOI: 10.1088/1674-1056/19/9/097801
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Role of nitrogen and oxygen in emission of Si quantum dots formed by pulse laser

Huang Wei-Qi(黄伟其)a), Liu Jia-Xing(刘家兴)a), Cai Cheng-Lan(蔡成兰)a), Lü Quan(吕泉)a), Liu Shi-Rong(刘世荣)b)*, and Qin Chao-Jian(秦朝建)b)
a Institute of Nanophotonic Physics, Guizhou University, Guiyang 550025, China; b State Key Laboratory of Ore Deposit, Geochemistry Institute of Geochemistry, Chinese Academy of Sciences, Guiyang 550003, China
Abstract  Silicon quantum dots fabricated by nanosecond pulsed laser in nitrogen, oxygen or air atmosphere have enhanced photoluminescence (PL) emission with the stimulated emission observed at about 700 nm. It is difficult to distinguish between the photoluminescence peaks emitted from samples prepared in different atmospheres. The reason for the appearance of similar peaks may be the similar distribution of the localised states in the gap for different samples when silicon dangling bonds of quantum dots are passivated by nitrogen or oxygen. It is revealed that both the kind and the density of passivated bonds on quantum dot surface prepared in oxygen or nitrogen have a strong influence on the enhancement of PL emission.
Keywords:  nitrogen and oxygen      quantum dots      stimulated emission      localised states  
Received:  11 December 2009      Revised:  01 April 2010      Accepted manuscript online: 
PACS:  7845  
  6820  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 10764002 and 60966002), and by the National Key Laboratory of Surface Physics at Fudan University.

Cite this article: 

Huang Wei-Qi(黄伟其), Liu Jia-Xing(刘家兴), Cai Cheng-Lan(蔡成兰), Lü Quan(吕泉), Liu Shi-Rong(刘世荣), and Qin Chao-Jian(秦朝建) Role of nitrogen and oxygen in emission of Si quantum dots formed by pulse laser 2010 Chin. Phys. B 19 097801

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