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Chin. Phys. B, 2010, Vol. 19(9): 097701    DOI: 10.1088/1674-1056/19/9/097701

Properties study of LiNbO3 lateral field excited device working on thickness extension mode

Zhang Zhi-Tian(张志甜)a), Zhang Chao(张超)b), Wang Wen-Yan(王文炎)b), Ma Ting-Feng(马廷锋)a), Liu Yan(刘岩) b), and Feng Guan-Ping(冯冠平)b)
a Department of Precision Instruments and Mechanology, Tsinghua University, Beijing 100084, China; b Research Institute of Tsinghua University in Shenzhen, Shenzhen, Guangdong 518057, China
Abstract  This paper investigates the properties of thickness extension mode excited by lateral electric field on LiNbO3 by using the extended Christoffel–Bechmann method. It finds that the lateral field excitation coupling factor for a-mode (quasi-extensional mode) reaches its maximum value of 28% on X-cut LiNbO3. The characteristics of a lateral field excitation device made of X-cut LiNbO3 have been investigated and the lateral field excitation device is used for the design of a high frequency ultrasonic transducer. The time and frequency domain pulse/echo response of the LiNbO3 lateral field excitation ultrasonic transducer is analysed with the modified Krimholtz–Leedom–Matthae model and tested using traditional pulse/echo method. A LiNbO3 lateral field excitation ultrasonic transducer with the centre frequency of 33.44 MHz and the –6 dB bandwidth of 33.8% is acquired, which is in good agreement with the results of the Krimholtz–Leedom–Matthae model. Further analysis suggests that the LiNbO3 lateral field excitation device has great potential in the design of broadband high frequency ultrasonic transducers.
Keywords:  lateral field excitation      high frequency ultrasonic transducer      LiNbO3      thickness extension mode  
Received:  16 December 2009      Revised:  24 March 2010      Accepted manuscript online: 
PACS:  7760  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60571014) and Shenzhen Shuangbai Project.

Cite this article: 

Zhang Zhi-Tian(张志甜), Zhang Chao(张超), Wang Wen-Yan(王文炎), Ma Ting-Feng(马廷锋), Liu Yan(刘岩), and Feng Guan-Ping(冯冠平) Properties study of LiNbO3 lateral field excited device working on thickness extension mode 2010 Chin. Phys. B 19 097701

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