Please wait a minute...
Chin. Phys. B, 2008, Vol. 17(6): 2272-2276    DOI: 10.1088/1674-1056/17/6/056
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Effect of thermal-annealing on the magnetoresistance of manganite-based junctions

Xie Yan-Wu(谢燕武)a)b), Shen Bao-Gen (沈保根)b), and Sun Ji-Rong(孙继荣)b)
a State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China; b State Key Laboratory for Magnetism, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Abstract  Thermal-annealing has been widely used in modulating the oxygen content of manganites. In this work, we have studied the effect of annealing on the transport properties and magnetoresistance of junctions composed of a La0.9Ca0.1MnO3 + $\delta$ film and a Nb-doped SrTiO3 substrate. We have demonstrated that the magnetoresistance of junctions is strongly dependent on the annealing conditions: From the junction annealed-in-air to the junction annealed-in-vacuum, the magnetoresistance near 0-V bias can vary from $\sim$ --60% to $\sim$ 0. A possible mechanism accounting for this phenomenon is discussed.
Keywords:  manganite      magnetoresistance      manganite junction      annealing  
Received:  04 December 2007      Revised:  08 January 2008      Accepted manuscript online: 
PACS:  73.40.-c (Electronic transport in interface structures)  
  73.50.Jt (Galvanomagnetic and other magnetotransport effects)  
  75.47.Lx (Magnetic oxides)  
  75.60.Nt (Magnetic annealing and temperature-hysteresis effects)  
  81.40.Ef (Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos 10474133 and 10674169) and the National Fundamental Research of China (Grant No 2007CB925002).

Cite this article: 

Xie Yan-Wu(谢燕武), Shen Bao-Gen (沈保根), and Sun Ji-Rong(孙继荣) Effect of thermal-annealing on the magnetoresistance of manganite-based junctions 2008 Chin. Phys. B 17 2272

[1] Recent progress on the planar Hall effect in quantum materials
Jingyuan Zhong(钟景元), Jincheng Zhuang(庄金呈), and Yi Du(杜轶). Chin. Phys. B, 2023, 32(4): 047203.
[2] Abnormal magnetoresistance effect in the Nb/Si superconductor-semiconductor heterojunction
Zhi-Wei Hu(胡志伟) and Xiang-Gang Qiu(邱祥冈). Chin. Phys. B, 2023, 32(3): 037401.
[3] Measurement of T wave in magnetocardiography using tunnel magnetoresistance sensor
Zhihong Lu(陆知宏), Shuai Ji(纪帅), and Jianzhong Yang(杨建中). Chin. Phys. B, 2023, 32(2): 020703.
[4] Strain-mediated magnetoelectric control of tunneling magnetoresistance in magnetic tunneling junction/ferroelectric hybrid structures
Wenyu Huang(黄文宇), Cangmin Wang(王藏敏), Yichao Liu(刘艺超), Shaoting Wang(王绍庭), Weifeng Ge(葛威锋), Huaili Qiu(仇怀利), Yuanjun Yang(杨远俊), Ting Zhang(张霆), Hui Zhang(张汇), and Chen Gao(高琛). Chin. Phys. B, 2022, 31(9): 097502.
[5] Phosphorus diffusion and activation in fluorine co-implanted germanium after excimer laser annealing
Chen Wang(王尘), Wei-Hang Fan(范伟航), Yi-Hong Xu(许怡红), Yu-Chao Zhang(张宇超), Hui-Chen Fan(范慧晨), Cheng Li(李成), and Song-Yan Cheng(陈松岩). Chin. Phys. B, 2022, 31(9): 098503.
[6] Analytical formula describing the non-saturating linear magnetoresistance in inhomogeneous conductors
Shan-Shan Chen(陈珊珊), Yang Yang(杨阳), and Fan Yang(杨帆). Chin. Phys. B, 2022, 31(8): 087303.
[7] Introducing voids around the interlayer of AlN by high temperature annealing
Jianwei Ben(贲建伟), Jiangliu Luo(罗江流), Zhichen Lin(林之晨), Xiaojuan Sun(孙晓娟), Xinke Liu(刘新科), and Xiaohua Li(黎晓华). Chin. Phys. B, 2022, 31(7): 076104.
[8] Spin transport in epitaxial Fe3O4/GaAs lateral structured devices
Zhaocong Huang(黄兆聪), Wenqing Liu(刘文卿), Jian Liang(梁健), Qingjie Guo(郭庆杰), Ya Zhai(翟亚), and Yongbing Xu(徐永兵). Chin. Phys. B, 2022, 31(6): 068505.
[9] Maximum entropy mobility spectrum analysis for the type-I Weyl semimetal TaAs
Wen-Chong Li(李文充), Ling-Xiao Zhao(赵凌霄), Hai-Jun Zhao(赵海军),Gen-Fu Chen(陈根富), and Zhi-Xiang Shi(施智祥). Chin. Phys. B, 2022, 31(5): 057103.
[10] Magnetoresistance effect in vertical NiFe/graphene/NiFe junctions
Pei-Sen Li(李裴森), Jun-Ping Peng(彭俊平), Yue-Guo Hu(胡悦国), Yan-Rui Guo(郭颜瑞), Wei-Cheng Qiu(邱伟成), Rui-Nan Wu(吴瑞楠), Meng-Chun Pan(潘孟春), Jia-Fei Hu(胡佳飞), Di-Xiang Chen(陈棣湘), and Qi Zhang(张琦). Chin. Phys. B, 2022, 31(3): 038502.
[11] Large positive magnetoresistance in photocarrier-doped potassium tantalites
Rui-Shu Yang(杨睿姝), Ding-Bang Wang(王定邦), Yang Zhao(赵阳), Shuan-Hu Wang(王拴虎), and Ke-Xin Jin(金克新). Chin. Phys. B, 2022, 31(12): 127302.
[12] Observation of quadratic magnetoresistance in twisted double bilayer graphene
Yanbang Chu(褚衍邦), Le Liu(刘乐), Yiru Ji(季怡汝), Jinpeng Tian(田金朋), Fanfan Wu(吴帆帆), Jian Tang(汤建), Yalong Yuan(袁亚龙), Yanchong Zhao(赵岩翀), Xiaozhou Zan(昝晓州), Rong Yang(杨蓉), Kenji Watanabe, Takashi Taniguchi, Dongxia Shi(时东霞), Wei Yang(杨威), and Guangyu Zhang(张广宇). Chin. Phys. B, 2022, 31(10): 107201.
[13] Sign reversal of anisotropic magnetoresistance and anomalous thickness-dependent resistivity in Sr2CrWO6/SrTiO3 films
Chunli Yao(姚春丽), Tingna Shao(邵婷娜), Mingrui Liu(刘明睿), Zitao Zhang(张子涛), Weimin Jiang(姜伟民), Qiang Zhao(赵强), Yujie Qiao(乔宇杰), Meihui Chen(陈美慧), Xingyu Chen(陈星宇), Ruifen Dou(窦瑞芬), Changmin Xiong(熊昌民), and Jiacai Nie(聂家财). Chin. Phys. B, 2022, 31(10): 107302.
[14] Probing the magnetization switching with in-plane magnetic anisotropy through field-modified magnetoresistance measurement
Runrun Hao(郝润润), Kun Zhang(张昆), Yinggang Li(李迎港), Qiang Cao(曹强), Xueying Zhang(张学莹), Dapeng Zhu(朱大鹏), and Weisheng Zhao(赵巍胜). Chin. Phys. B, 2022, 31(1): 017502.
[15] Construction and mechanism analysis on nanoscale thermal cloak by in-situ annealing silicon carbide film
Jian Zhang(张健), Hao-Chun Zhang(张昊春), Zi-Liang Huang(黄子亮), Wen-Bo Sun(孙文博), and Yi-Yi Li(李依依). Chin. Phys. B, 2022, 31(1): 014402.
No Suggested Reading articles found!