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Chin. Phys. B, 2008, Vol. 17(6): 2204-2207    DOI: 10.1088/1674-1056/17/6/044
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Magnetic and electrical properties of zincblende CrAs

Chen Peng(陈鹏)a)b) and Takamura Kb)
a SouthWest University, Department of Physics, Chongqing 400715, China; Research Institute of Electrical Communication, Tohoku University, Sendai, Japan
Abstract  This paper reports that 9 nm zincblende CrAs is grown by molecular-beam epitaxy on InAs buffer layer. The zb-CrAs shows ferromagnetism at room temperature and the total magnetic moment $3.09\pm 0.15\,\mu_{\rm B}$ per CrAs unit. The temperature dependence of zb-CrAs resistance $R$ shows metallic behaviour.
Keywords:  zincblende      molecular-beam epitaxy      half-metal  
Received:  17 March 2007      Revised:  03 December 2007      Accepted manuscript online: 
PACS:  75.30.Cr (Saturation moments and magnetic susceptibilities)  
  73.40.Ns (Metal-nonmetal contacts)  
  73.61.At (Metal and metallic alloys)  
  75.50.Cc (Other ferromagnetic metals and alloys)  
  75.60.Ej (Magnetization curves, hysteresis, Barkhausen and related effects)  
  81.15.Hi (Molecular, atomic, ion, and chemical beam epitaxy)  
Fund: Project supported by the Key Project of Chinese Ministry of Education (Grant No 107092), a Foundation for the Author of National Excellent Doctoral Dissertation of China (Grant No 200728) and a grant from the Science {\&} Technology Commission, Chongqing,

Cite this article: 

Chen Peng(陈鹏) and Takamura K Magnetic and electrical properties of zincblende CrAs 2008 Chin. Phys. B 17 2204

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