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Chin. Phys. B, 2008, Vol. 17(5): 1854-1857    DOI: 10.1088/1674-1056/17/5/051
PHYSICS OF GASES, PLASMAS, AND ELECTRIC DISCHARGES Prev   Next  

Resonant detection of terahertz radiation utilizing plasma waves in high-electron-mobility transistors

Ma Ming-Rui(马明瑞), Chen Yu-Ling(陈钰玲), Wang Li-Min(王立敏), and Wang Chang(王长)
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences and Graduate School of Chinese Academy of Sciences, Shanghai 200050, China
Abstract  This paper theoretically studies the high-electron-mobility transistor (HEMT) driven by the terahertz radiation. It calculates the gate-to-source/drain admittance and the detection responsivity of the HEMT as a function of the signal frequency. It finds that the peaks of the admittances and the responsivity show redshift, and the heights of the peaks decrease with increasing the lengths of the source-to-gate and gate-to-drain spacing. Such phenomena may be useful in designing different HEMTs by utilizing the effects associated with the plasma oscillations excitation.
Keywords:  terahertz radiation      resonant      HEMT  
Received:  16 May 2007      Revised:  24 August 2007      Accepted manuscript online: 
PACS:  52.35.Fp (Electrostatic waves and oscillations (e.g., ion-acoustic waves))  
  52.75.-d (Plasma devices)  
  85.30.Tv (Field effect devices)  
Fund: Project supported by the National Fund for Distinguished Young Scholars of China (Grant No 60425415), the National Science Foundation of China (Grant No 60721004), the Shanghai Municipal Commission of Science and Technology, China (Grant Nos 06DJ14008 and

Cite this article: 

Ma Ming-Rui(马明瑞), Chen Yu-Ling(陈钰玲), Wang Li-Min(王立敏), and Wang Chang(王长) Resonant detection of terahertz radiation utilizing plasma waves in high-electron-mobility transistors 2008 Chin. Phys. B 17 1854

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