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Chin. Phys., 2004, Vol. 13(5): 725-730    DOI: 10.1088/1009-1963/13/5/026

Deposition behaviour of single Si adatom on p(2×2) Si(100) surface

Huang Yana, Zhu Xiao-Yanb
a Department of Physics, Soochow University, Suzhou 215006, China; National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China; b Department of Physics, Soochow University, Suzhou 215006, China; State Key Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210008, China
Abstract  The deposition of a single Si adatom on the p(2×2) reconstructed Si(100) surface has been simulated by an empirical tight-binding method. Using the perfect and defective Si surfaces as the deposition substrates, the deposition energies are mapped out around the research areas. From the calculated energy plots, the binding sites and several possible diffusion paths are achieved. The introduced defects will make the deposition behaviour different from that on the perfect surface.
Keywords:  empirical tight-binding      dimer vacancy      deposition      diffusion  
Received:  21 July 2003      Revised:  26 December 2003      Published:  06 July 2005
PACS:  68.43.Mn (Adsorption kinetics ?)  
  68.43.Jk (Diffusion of adsorbates, kinetics of coarsening and aggregation)  
Fund: Project supported by the Natural Science Foundation of Education Committee of Jiangsu Province, China (Grant No 00SJB140002).

Cite this article: 

Huang Yan, Zhu Xiao-Yan Deposition behaviour of single Si adatom on p(2×2) Si(100) surface 2004 Chin. Phys. 13 725

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