Deposition behaviour of single Si adatom on p(2×2) Si(100) surface
Huang Yana, Zhu Xiao-Yanb
a Department of Physics, Soochow University, Suzhou 215006, China; National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China; b Department of Physics, Soochow University, Suzhou 215006, China; State Key Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210008, China
Abstract The deposition of a single Si adatom on the p(2×2) reconstructed Si(100) surface has been simulated by an empirical tight-binding method. Using the perfect and defective Si surfaces as the deposition substrates, the deposition energies are mapped out around the research areas. From the calculated energy plots, the binding sites and several possible diffusion paths are achieved. The introduced defects will make the deposition behaviour different from that on the perfect surface.
Received: 21 July 2003
Revised: 26 December 2003
Published: 06 July 2005
