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Chinese Physics, 2003, Vol. 12(12): 1417-1422    DOI: 10.1088/1009-1963/12/12/014
CLASSICAL AREAS OF PHENOMENOLOGY Prev   Next  

Analysis of the laser performance of Tm3+, Tb3+(Ho3+):YVO4 crystals at ~1.5μm wavelength

Huang Li-Lei (黄莉蕾), Fu Yan-Bin (付晏彬), Wu Liang-Neng (邬良能)
Optoelectronic Research Center, China Institute of Metrology, Hangzhou 310034, China
Abstract  The absorption spectra of Tb,Tm:YVO$_4$ and Ho,Tm:YVO$_4$ are measured. The radiant and non-radiant transition probabilities from higher level to lower level, $A_{i,j}$ and $\omega_{i,j}$, and the cross-elaxation probability are calculated in virtue of Judd-Ofelt and Dexter theories. The fluorescence lifetime of Tm$^{3+}$ in the Tb$^{3+}$ (or Ho$^{3+}$) co-doped crystal is calculated. It indicates that the lifetime of initial level $^3$H$_4$ of the laser transition can be shorter than that of terminal level $^3$F$_4$ of the transition if the atomic percentage of Tb$^{3+}$ (or Ho$^{3+}$) ions is bigger than about 1 at%: namely, by means of the co-doping Tb$^{3+}$ (or Ho$^{3+}$) ions the self-termination phenomenon of laser light can be eliminated. Inserting the optic parameters to the formula deduced here on the laser threshold power $P^{(4)}_{\rm th}$ and the slope efficiency $\eta^{(4)}_{\rm s}$ of the four-energy-level system, we obtain the relationship of threshold power $P^{(4)}_{\rm th}$ to the concentration of Tm$^{3+}$ ions and discuss the effect of Tb$^{3+}$ (or Ho$^{3+}$) ion concentration on the laser threshold power $P^{(4)}_{\rm th}$  around 1.5μm wavelength. The result shows that Tb,Tm:YVO$_4$ crystal is a better choice to make the laser at $\sim1.5$μm wavelength than Ho,Tm:YVO$_4$ crystal. We give the appropriate composition of (1-2) at% Tb, (1-2) at% Tm:YVO$_4$, just for reference.
Keywords:  Tb(Ho)      Tm:YVO$_4$ crystal      fluorescence lifetime      lasing at around 1.5μm wavelength      self-termination phenomenon of laser  
Received:  14 March 2003      Revised:  23 April 2003      Accepted manuscript online: 
PACS:  42.60.Jf (Beam characteristics: profile, intensity, and power; spatial pattern formation)  
  42.55.Rz (Doped-insulator lasers and other solid state lasers)  
  42.70.Hj (Laser materials)  
  78.55.Hx (Other solid inorganic materials)  
  32.70.Cs (Oscillator strengths, lifetimes, transition moments)  
  32.50.+d (Fluorescence, phosphorescence (including quenching))  
Fund: Project supported by the Foundation of the Natural Science of Zhejiang Province, China(Grant No 600087), and by the State Key Laboratory of LMOI-013 Zhejiang University, China.

Cite this article: 

Huang Li-Lei (黄莉蕾), Fu Yan-Bin (付晏彬), Wu Liang-Neng (邬良能) Analysis of the laser performance of Tm3+, Tb3+(Ho3+):YVO4 crystals at ~1.5μm wavelength 2003 Chinese Physics 12 1417

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