Lu Hua (陆华)a, Shen Dian-hong (沈电洪)a, Deng Xin-fa (邓新发)b, Xue Qi-kun (薛其坤)a, N. Frouminc, M. Polakc
a State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China; b Department of Physics, Nanchang University, Nanchang 330047, China; c Department of Material and Engineering, Ben-Gurion University of the Negev, Beer-Sheva 84105, Israel
Abstract Thin Al films with a thickness of 20－30nm were prepared by ultra-high vacuum deposition of Al onto a graphite surface parallel to a (0001) basal plane. The samples were annealed up to 1070K. X-ray photoelectron spectroscopy analysis has shown that for temperatures just higher than 770K, a little carbide occurs in the Al film and only an Al－C phase is present at the Al/graphite interface. After annealing at 970K, the Al4C3 phase can be observed, and the binding energy of the Al2p electrons increases continuously from 72.7 to 74.2eV with increasing temperature up to 1070K. Auger electron spectroscopy depth profiles are measured to investigate the phases existing in the Al film as well as at the Al/graphite interface. It is found that the Al4C3 phase at the interface is the final product of a series of Al carbides from the interfacial reaction between Al and graphite.
Received: 20 March 2001
Revised: 09 May 2001
Accepted manuscript online:
(Surface and interface chemistry; heterogeneous catalysis at surfaces)
Fund: Project supported by the China and Israel Join-Program, the Chinese Ministry of Science and Technology and Ministry of Science and Arts, Israel (Grant No. ZYJ01-01).}
Cite this article:
Lu Hua (陆华), Shen Dian-hong (沈电洪), Deng Xin-fa (邓新发), Xue Qi-kun (薛其坤), N. Froumin, M. Polak STUDY OF THE Al/GRAPHITE INTERFACE 2001 Chinese Physics 10 832
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