Method of evaluating interface traps in Al2O3/AlGaN/GaN high electron mobility transistors

doi:10.1088/1674-1056/28/6/067304

Abstract

In this paper, the interface states of the AlGaN/GaN metal-insulator-semiconductor (MIS) high electron mobility transistors (HEMTs) with an Al₂O₃ gate dielectric are systematically evaluated. By frequency-dependent capacitance and conductance measurements, trap density and time constant at Al₂O₃/AlGaN and AlGaN/GaN interface are determined. The experimental results reveal that the density of trap states and the activation energy at the Al₂O₃/AlGaN interface are much higher than at the AlGaN/GaN interface. The photo-assisted capacitance-voltage measurements are performed to characterize the deep-level traps located near mid-gap at the Al₂O₃/AlGaN interface, which indicates that a density of deep-level traps is lower than the density of the shallow-level states.

Keywords: AlGaN/GaN HEMTs interface traps frequency-dependent C-V measurements photo-assisted C-V measurements

Received: 20 November 2018
Revised: 02 April 2019
Accepted manuscript online:

PACS:	73.61.Ey	(III-V semiconductors)
	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	73.50.Gr	(Charge carriers: generation, recombination, lifetime, trapping, mean free paths)

Fund:

Project supported by the Key Program of National Natural Science Foundation of China (Grant Nos. 61334002 and 61634005) and the National Natural Science Foundation of China (Grant Nos. 61604114 and 61704124).

Corresponding Authors: Xiao-Hua Ma
E-mail: xhma@xidian.edu.cn

Cite this article:

Si-Qin-Gao-Wa Bao(包斯琴高娃), Xiao-Hua Ma(马晓华), Wei-Wei Chen(陈伟伟), Ling Yang(杨凌), Bin Hou(侯斌), Qing Zhu(朱青), Jie-Jie Zhu(祝杰杰), Yue Hao(郝跃) Method of evaluating interface traps in Al₂O₃/AlGaN/GaN high electron mobility transistors 2019 Chin. Phys. B 28 067304

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Method of evaluating interface traps in Al2O3/AlGaN/GaN high electron mobility transistors

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Method of evaluating interface traps in Al₂O₃/AlGaN/GaN high electron mobility transistors