Thermal characterization of GaN heteroepitaxies using ultraviolet transient thermoreflectance

doi:10.1088/1674-1056/28/6/060701

Abstract Thermal transport properties of GaN heteroepitaxial structures are of critical importance for the thermal management of high-power GaN electronic and optoelectronic devices. Ultraviolet (UV) lasers are employed to directly heat and sense the GaN epilayers in the transient thermoreflectance (TTR) measurement, obtaining important thermal transport properties in different GaN heterostructures, which include a diamond thin film heat spreader grown on GaN. The UV TTR technique enables rapid and non-contact thermal characterization for GaN wafers.

Keywords: GaN heteroepitaxy thermal conductivity transient thermoreflectance ultraviolet laser

Received: 21 December 2018
Revised: 15 April 2019
Accepted manuscript online:

PACS:	07.20.-n	(Thermal instruments and apparatus)
	65.40.-b	(Thermal properties of crystalline solids)
	61.72.uj	(III-V and II-VI semiconductors)
	78.20.N-

Fund: Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 61604049) and the Shenzhen Municipal Research Project (Grant No. JCYJ20160531192714636).

Corresponding Authors: Huarui Sun
E-mail: huarui.sun@hit.edu.cn

Cite this article:

Kang Liu(刘康), Jiwen Zhao(赵继文), Huarui Sun(孙华锐), Huaixin Guo(郭怀新), Bing Dai(代兵), Jiaqi Zhu(朱嘉琦) Thermal characterization of GaN heteroepitaxies using ultraviolet transient thermoreflectance 2019 Chin. Phys. B 28 060701

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Thermal characterization of GaN heteroepitaxies using ultraviolet transient thermoreflectance

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