Short-gate AlGaN/GaN high-electron mobility transistors with BGaN buffer

doi:10.1088/1674-1056/28/4/047302

Abstract

Using the semi-insulating property and small lattice constant a of wurtzite BGaN alloy, we propose a BGaN buffer with a B-content of 1% to enhance two-dimensional electron gas (2DEG) confinement in a short-gate AlGaN/GaN high-electron mobility transistor (HEMT). Based on the two-dimensional TCAD simulation, the direct current (DC) and radio frequency (RF) characteristics of the AlGaN/GaN/B_0.01Ga_0.99N structure HEMTs are theoretically studied. Our results show that the BGaN buffer device achieves good pinch-off quality and improves RF performance compared with GaN buffer device. The BGaN buffer device can allow a good immunity to shift of threshold voltage for the aspect ratio (L_G/d) down to 6, which is much lower than that the GaN buffer device with L_G/d=11 can reach. Furthermore, due to a similar manner of enhancing 2DEG confinement, the B_0.01Ga_0.99N buffer device has similar DC and RF characteristics to those the AlGaN buffer device possesses, and its ability to control short-channel effects (SCEs) is comparable to that of an Al_0.03Ga_0.97N buffer. Therefore, this BGaN buffer with very small B-content promises to be a new method to suppress SCEs in GaN HEMTs.

Keywords: AlGaN/GaN HEMT BGaN back barrier short-channel effects (SCEs)

Received: 28 November 2018
Revised: 03 February 2019
Accepted manuscript online:

PACS:	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	85.30.Tv	(Field effect devices)
	85.30.De	(Semiconductor-device characterization, design, and modeling)

Fund:

Project supported by the Foundation Project of the Science and Technology on Electro-Optical Information Security Control Laboratory, China (Grant No. 614210701041705)

Corresponding Authors: Hong-Dong Zhao
E-mail: zhaohd@hebut.edu.cn

Cite this article:

Tie-Cheng Han(韩铁成), Hong-Dong Zhao(赵红东), Xiao-Can Peng(彭晓灿) Short-gate AlGaN/GaN high-electron mobility transistors with BGaN buffer 2019 Chin. Phys. B 28 047302

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Short-gate AlGaN/GaN high-electron mobility transistors with BGaN buffer

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