Electro-optical dual modulation on resistive switching behavior in BaTiO3/BiFeO3/TiO2 heterojunction

doi:10.1088/1674-1056/ab54b4

Abstract The novel BaTiO₃/BiFeO₃/TiO₂ multilayer heterojunction is prepared on a fluorine-doped tinoxide (FTO) substrate by the sol-gel method. The results indicate that the Pt/BaTiO₃/BiFeO₃/TiO₂/FTO heterojunction exhibits stable bipolar resistive switching characteristic, good retention performance, and reversal characteristic. Under different pulse voltages and light fields, four stable resistance states can also be realized. The analysis shows that the main conduction mechanism of the resistive switching characteristic of the heterojunction is space charge limited current (SCLC) effect. After the comprehensive analysis of the band diagram and the P-E ferroelectric property of the multilayer heterojunction, we can deduce that the SCLC is formed by the effect of the oxygen vacancy which is controlled by ferroelectric polarization-modulated change of interfacial barrier. And the effective photo-generated carrier also plays a regulatory role in resistance state (RS), which is formed by the double ferroelectric layer BaTiO₃/BiFeO₃ under different light fields. This research is of potential application values for developing the multi-state non-volatile resistance random access memory (RRAM) devices based on ferroelectric materials.

Keywords: ferroelectric multilayer heterojunction resistive switching characteristic electro-optical dual modulation multi-state resistance

Received: 08 August 2019
Revised: 04 October 2019
Accepted manuscript online:

PACS:	68.65.Ac	(Multilayers)
	73.40.Lq	(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	85.50.Gk	(Non-volatile ferroelectric memories)

Fund: Project supported by the Scientific Research Program of Hunan Provincial Education Department, China (Grant No. 18C0232) and the International Cooperative Extension Program of Changsha University of Science and Technology, China (Grant No. 2019IC35).

Corresponding Authors: Wei Wang
E-mail: wangwei@csust.edu.cn

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Jia-Jia Zhao(赵佳佳), Jin-Shuai Zhang(张金帅), Feng Zhang(张锋), Wei Wang(王威), Hai-Rong He(何海蓉), Wang-Yang Cai(蔡汪洋), Jin Wang(王进) Electro-optical dual modulation on resistive switching behavior in BaTiO₃/BiFeO₃/TiO₂ heterojunction 2019 Chin. Phys. B 28 126801

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Electro-optical dual modulation on resistive switching behavior in BaTiO3/BiFeO3/TiO2 heterojunction

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Electro-optical dual modulation on resistive switching behavior in BaTiO₃/BiFeO₃/TiO₂ heterojunction