Metal-to-insulator transition in two-dimensional ferromagnetic monolayer induced by substrate

doi:10.1088/1674-1056/27/7/077106

Abstract

Two-dimensional (2D) ferromagnetic (FM) materials have great potential for applications in next-generation spintronic devices. Since most 2D FM materials come from van der Waals crystals, stabilizing them on a certain substrate without killing the ferromagnetism is still a challenge. Through systematic first-principles calculations, we proposed a new family of 2D FM materials which combines TaX (X=S, Se or Te) monolayer and Al₂O₃(0001) substrate. The TaX monolayers provide magnetic states and the Al₂O₃(0001) substrate stabilizes the former. Interestingly, the Al₂O₃(0001) substrate leads to a metal-to-insulator transition in the TaX monolayers and induces a band gap up to 303 meV. Our study paves the way to explore promising 2D FM materials for practical applications in spintronics devices.

Keywords: metal-to-insulator transition two-dimensional monolayer ferromagnetic material

Received: 19 March 2018
Revised: 18 April 2018
Accepted manuscript online:

PACS:	71.30.+h	(Metal-insulator transitions and other electronic transitions)
	73.22.-f	(Electronic structure of nanoscale materials and related systems)
	76.50.+g	(Ferromagnetic, antiferromagnetic, and ferrimagnetic resonances; spin-wave resonance)

Fund:

Project supported by the National Natural Science Foundation of China (Grant No. 11574223), the Natural Science Foundation of Jiangsu Province, China (Grant No. BK20150303), and the Jiangsu Specially-Appointed Professor Program of Jiangsu Province, China.

Corresponding Authors: Jun Hu
E-mail: jhu@suda.edu.cn

Cite this article:

Can Qi(齐灿), Jun Hu(胡军) Metal-to-insulator transition in two-dimensional ferromagnetic monolayer induced by substrate 2018 Chin. Phys. B 27 077106

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Metal-to-insulator transition in two-dimensional ferromagnetic monolayer induced by substrate

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