Non-monotonic dependence of current upon i-width in silicon p-i-n diodes

doi:10.1088/1674-1056/27/6/066106

Abstract Silicon p-i-n diodes with different i-region widths are fabricated and tested. It is found that the current shows the non-monotonic behavior as a function of i-region width at a bias voltage of 1.0 V. In this paper, an analytical model is presented to explain the non-monotonic behavior, which mainly takes into account the diffusion current and recombination current contributing to the total current. The calculation results indicate that the concentration ratio of p-region to n-region plays a crucial role in the non-monotonic behavior, and the carrier lifetime also has a great influence on this abnormal phenomenon.

Keywords: semiconductor junction diodes transport properties

Received: 11 September 2017
Revised: 23 January 2018
Accepted manuscript online:

PACS:	61.82.Fk	(Semiconductors)
	85.30.Kk	(Junction diodes)
	91.60.Tn	(Transport properties)

Corresponding Authors: Jian-Hong Yang
E-mail: yangjh@lzu.edu.cn

Cite this article:

Zheng-Peng Pang(庞正鹏), Xin Wang(王欣), Jian Chen(陈健), Pan Yang(杨盼), Yang Zhang(张洋), Yong-Hui Tian(田永辉), Jian-Hong Yang(杨建红) Non-monotonic dependence of current upon i-width in silicon p-i-n diodes 2018 Chin. Phys. B 27 066106

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Non-monotonic dependence of current upon i-width in silicon p-i-n diodes

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