Thermoelectric properties of two-dimensional hexagonal indium-VA

doi:10.1088/1674-1056/27/2/026802

Abstract The electrical properties and thermoelectric (TE) properties of monolayer In-VA are investigated theoretically by combining first-principles method with Boltzmann transport theory. The ultralow intrinsic thermal conductivities of 2.64 W·m^-1·K^-1 (InP), 1.31 W·m^-1·K^-1 (InAs), 0.87 W·m^-1·K^-1 (InSb), and 0.62 W·m^-1 K^-1 (InBi) evaluated at room temperature are close to typical thermal conductivity values of good TE materials (κ < 2 W·m^-1·K^-1). The maximal ZT values of 0.779, 0.583, 0.696, 0.727, and 0.373 for InN, InP, InAs, InSb, and InBi at p-type level are calculated at 900 K, which makes In-VA potential TE material working at medium-high temperature.

Keywords: thermoelectric properties two-dimensional In-VA figure of merit

Received: 06 September 2017
Revised: 04 November 2017
Accepted manuscript online:

PACS:	68.65.-k	(Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties)
	63.22.-m	(Phonons or vibrational states in low-dimensional structures and nanoscale materials)
	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	84.60.Bk	(Performance characteristics of energy conversion systems; figure of merit)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61675032 and 11604019) and the National Basic Research Program of China (Grant No. 2014CB643900).

Corresponding Authors: Ruge Quhe, Peng-Fei Lu
E-mail: quheruge@bupt.edu.cn;photon.bupt@gmail.com

About author: 68.65.-k; 63.22.-m; 73.40.Kp; 84.60.Bk

Cite this article:

Jing-Yun Bi(毕京云), Li-Hong Han(韩利红), Qian Wang(王倩), Li-Yuan Wu(伍力源), Ruge Quhe(屈贺如歌), Peng-Fei Lu(芦鹏飞) Thermoelectric properties of two-dimensional hexagonal indium-VA 2018 Chin. Phys. B 27 026802

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Thermoelectric properties of two-dimensional hexagonal indium-VA

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