Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors

doi:10.1088/1674-1056/26/9/097104

Abstract The parasitic source resistance (R_S) of AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) is studied in the temperature range 300-500 K. By using the measured R_S and both capacitance-voltage (C-V) and current-voltage (I-V) characteristics for the fabricated device at 300, 350, 400, 450, and 500 K, it is found that the polarization Coulomb field (PCF) scattering exhibits a significant impact on R_S at the above-mentioned different temperatures. Furthermore, in the AlGaN/AlN/GaN HFETs, the interaction between the additional positive polarization charges underneath the gate contact and the additional negative polarization charges near the source Ohmic contact, which is related to the PCF scattering, is verified during the variable-temperature study of R_S.

Keywords: AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) parasitic source resistance polarization Coulomb field scattering

Received: 14 January 2017
Revised: 23 April 2017
Accepted manuscript online:

PACS:	71.55.Eq	(III-V semiconductors)
	73.40.Cg	(Contact resistance, contact potential)
	51.50.+v	(Electrical properties)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 11174182, 11574182, and 61306113) and the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20110131110005).

Corresponding Authors: Zhao-Jun Lin
E-mail: linzj@sdu.edu.cn

Cite this article:

Yan Liu(刘艳), Zhao-Jun Lin(林兆军), Yuan-Jie Lv(吕元杰), Peng Cui(崔鹏), Chen Fu(付晨), Ruilong Han(韩瑞龙), Yu Huo(霍宇), Ming Yang(杨铭) Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors 2017 Chin. Phys. B 26 097104

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Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors

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