Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin

doi:10.1088/1674-1056/26/9/096103

Abstract In this work, the total ionizing dose (TID) effect on 130 nm partially depleted (PD) silicon-on-insulator (SOI) static random access memory (SRAM) cell stability is measured. The SRAM cell test structure allowing direct measurement of the static noise margin (SNM) is specifically designed and irradiated by gamma-ray. Both data sides' SNM of 130 nm PD SOI SRAM cell are decreased by TID, which is different from the conclusion obtained in old generation devices that one data side's SNM is decreased and the other data side's SNM is increased. Moreover, measurement of SNM under different supply voltages (V_dd) reveals that SNM is more sensitive to TID under lower V_dd. The impact of TID on SNM under data retention V_dd should be tested, because V_dd of SRAM cell under data retention mode is lower than normal V_dd. The mechanism under the above results is analyzed by measurement of I-V characteristics of SRAM cell transistors.

Keywords: silicon-on-insulator total ionizing dose static random access memory static noise margin

Received: 28 April 2017
Revised: 12 June 2017
Accepted manuscript online:

PACS:	61.80.Ed	(γ-ray effects)
	61.82.Fk	(Semiconductors)
	85.30.Tv	(Field effect devices)
	07.85.-m	(X- and γ-ray instruments)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. U1532261 and 11605282) and the Opening Fund of Key Laboratory of Silicon Device Technology, Chinese Academy of Sciences Research Projects (Grant No. KLSDTJJ2016-07).

Corresponding Authors: Fazhan Zhao
E-mail: qiwinzheng@163.com,qwzheng@ms.xjb.ac.cn

Cite this article:

Qiwen Zheng(郑齐文), Jiangwei Cui(崔江维), Mengxin Liu(刘梦新), Dandan Su(苏丹丹), Hang Zhou(周航), Teng Ma(马腾), Xuefeng Yu(余学峰), Wu Lu(陆妩), Qi Guo(郭旗), Fazhan Zhao(赵发展) Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin 2017 Chin. Phys. B 26 096103

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Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin

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