Degradation behavior of electrical properties of GaInAs (1.0 eV) and GaInAs (0.7 eV) sub-cells of IMM4J solar cells under 1-MeV electron irradiation

doi:10.1088/1674-1056/26/8/088801

Abstract

In this work the degradation effects of the Ga_0.7In_0.3As (1.0 eV) and Ga_0.42In_0.58As (0.7 eV) sub-cells for IMM4J solar cells are investigated after 1-MeV electron irradiation by using spectral response and photoluminescence (PL) signal amplitude analysis, as well as electrical property measurements. The results show that, compared with the electrical properties of traditional single junction (SJ) GaAs (1.41 eV) solar cell, the electrical properties (such as I_sc, V_oc, and P_max) of the newly sub-cells degrade similarly as a function of Φ, where Φ represents the electron fluence. It is found that the degradation of V_oc is much more than that of I_sc in the irradiated Ga_0.42In_0.58As (0.7 eV) cells due to the additional intrinsic layer, leading to more serious damage to the space charge region. However, of the three types of SJ cells with the gap widths of 0.7, 1.0, and 1.4 eV, the electric properties of the Ga_0.7In_0.3As (1.0 eV) cell decrease largest under each irradiation fluence. Analysis on the spectral response indicates that the J_sc of the Ga_0.7In_0.3As (1.0 eV) cell also shows the most severe damage. The PL amplitude measurements qualitatively confirm that the degradation of the effective minority carrier life-time (τ_eff) in the SJ Ga_0.7In_0.3As cells is more drastic than that of SJ GaAs cells during the irradiation. Thus, the output current of Ga_0.7In_0.3As sub-cell should be controlled in the irradiated IMM4J cells.

Keywords: IMM4J Ga_0.7In_0.3As (1.0 eV) Ga_0.42In_0.58As (0.7 eV) electrical properties

Received: 04 March 2017
Revised: 21 April 2017
Accepted manuscript online:

PACS:	88.40.jp	(Multijunction solar cells)
	88.40.H-	(Solar cells (photovoltaics))
	88.40.fh	(Advanced materials development)

Fund:

Project supported by the National Natural Science Foundation of China (Grant No. 11475049).

Corresponding Authors: Yi-Yong Wu
E-mail: wuyiyong@hit.edu.cn

About author: 0.1088/1674-1056/26/8/

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Yan-Qing Zhang(张延清), Ming-Xue Huo(霍明学), Yi-Yong Wu(吴宜勇), Cheng-Yue Sun(孙承月), Hui-Jie Zhao(赵慧杰), Hong-Bin Geng(耿洪滨), Shuai Wang(王帅), Ru-Bin Liu(刘如彬), Qiang Sun(孙强) Degradation behavior of electrical properties of GaInAs (1.0 eV) and GaInAs (0.7 eV) sub-cells of IMM4J solar cells under 1-MeV electron irradiation 2017 Chin. Phys. B 26 088801

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Degradation behavior of electrical properties of GaInAs (1.0 eV) and GaInAs (0.7 eV) sub-cells of IMM4J solar cells under 1-MeV electron irradiation

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