An investigation of ionizing radiation damage in different SiGe processes

doi:10.1088/1674-1056/26/8/088503

Abstract

Different SiGe processes and device designs are the critical influences of ionizing radiation damage. Based on the different ionizing radiation damage in SiGe HBTs fabricated by Huajie and an IBM SiGe process, quantitatively numerical simulation of ionizing radiation damage was carried out to explicate the distribution of radiation-induced charges buildup in KT9041 and IBM SiGe HBTs. The sensitive areas of the EB-spacer and isolation oxide of KT9041 are much larger than those of the IBM SiGe HBT, and the distribution of charge buildup in KT9041 is several orders of magnitude greater than that of the IBM SiGe HBT. The result suggests that the simulations are consistent with the experiment, and indicates that the geometry of the EB-spacer, the area of the Si/SiO₂ interface and the isolation structure could be contributing to the different ionizing radiation damage.

Keywords: different silicon-germanium process ionizing radiation damage numerical simulation

Received: 28 February 2017
Revised: 27 April 2017
Accepted manuscript online:

PACS:	85.30.Pq	(Bipolar transistors)
	61.80.Az	(Theory and models of radiation effects)
	73.40.Lq	(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	61.80.-x	(Physical radiation effects, radiation damage)

Fund:

Project supported by the National Natural Science Foundation of China (Grant Nos. 61274106 and 61574171).

Corresponding Authors: Chao-Hui He
E-mail: hechaohui@mail.xjtu.edu.cn

About author: 0.1088/1674-1056/26/8/

Cite this article:

Pei Li(李培), Mo-Han Liu(刘默寒), Chao-Hui He(贺朝会), Hong-Xia Guo(郭红霞), Jin-Xin Zhang(张晋新), Ting Ma(马婷) An investigation of ionizing radiation damage in different SiGe processes 2017 Chin. Phys. B 26 088503

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