Study on irradiation-induced defects in GaAs/AlGaAs core-shell nanowires via photoluminescence technique

doi:10.1088/1674-1056/26/8/086201

Abstract

To gain a physical insight into the radiation effect on nanowires (NWs), the time resolved photoluminescence (TRPL) technique is used to investigate the carrier dynamic behaviors in GaAs/AlGaAs core-shell NWs before and after 1-MeV proton irradiation with fluences ranging from 1.0×10¹² cm^-2 to 3.0×10¹³ cm^-2. It is found that the degradations of spectral peak intensity and minority carrier lifetime show similar trends against irradiation fluence, which is closely related to the displacement defects induced by irradiation. We also find that the proton irradiation-induced defects behave as Shockley-Read-Hall (SRH) recombination center trapping free carriers. Finally, the defect concentration could be estimated through measuring the minority carrier lifetime.

Keywords: radiation effect minority carrier lifetime defect concentration radiation damage

Received: 27 February 2017
Revised: 30 April 2017
Accepted manuscript online:

PACS:	62.23.Hj	(Nanowires)
	61.72.-y	(Defects and impurities in crystals; microstructure)
	61.80.-x	(Physical radiation effects, radiation damage)
	61.80.Jh	(Ion radiation effects)

Corresponding Authors: Fa-Jun Li
E-mail: lifajun1201@gmail.com

About author: 0.1088/1674-1056/26/8/

Cite this article:

Li-Ying Tan(谭立英), Fa-Jun Li(黎发军), Xiao-Long Xie(谢小龙), Yan-Ping Zhou(周彦平), Jing Ma(马晶) Study on irradiation-induced defects in GaAs/AlGaAs core-shell nanowires via photoluminescence technique 2017 Chin. Phys. B 26 086201

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Study on irradiation-induced defects in GaAs/AlGaAs core-shell nanowires via photoluminescence technique

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