| PHYSICS OF GASES, PLASMAS, AND ELECTRIC DISCHARGES |
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Effect of driving frequency on the structure of silicon grown on Ag (111) films by very-high-frequency magnetron sputtering |
| Jia-Min Guo(郭佳敏)1, Chao Ye(叶超)1,2, Xiang-Ying Wang(王响英)3, Pei-FangYang(杨培芳)1, Su Zhang(张苏)3 |
1 College of Physics, Optoelectronics and Energy, Soochow University, Suzhou 215006, China;
2 Key Laboratory of Thin Films of Jiangsu Province, Soochow University, Suzhou 215006, China;
3 Medical College, Soochow University, Suzhou 215123, China |
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Abstract The effect of driving frequency on the structure of silicon grown on Ag (111) film is investigated, which was prepared by using the very-high-frequency (VHF) (40.68 MHz and 60 MHz) magnetron sputtering. The energy and flux density of the ions impinging on the substrate are also analyzed. It is found that for the 60-MHz VHF magnetron sputtering, the surface of silicon on Ag (111) film exhibits a small cone structure, similar to that of Ag (111) film substrate, indicating a better microstructure continuity. However, for the 40.68-MHz VHF magnetron sputtering, the surface of silicon on Ag (111) film shows a hybrid structure of hollowed-cones and hollowed-particles, which is completely different from that of Ag (111) film. The change of silicon structure is closely related to the differences in the ion energy and flux density controlled by the driving frequency of sputtering.
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Received: 02 December 2016
Revised: 12 February 2017
Accepted manuscript online:
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PACS:
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52.80.Pi
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(High-frequency and RF discharges)
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81.15.Cd
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(Deposition by sputtering)
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68.55.J-
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(Morphology of films)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 11675118 and 11275136). |
Corresponding Authors:
Chao Ye
E-mail: cye@suda.edu.cn
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Cite this article:
Jia-Min Guo(郭佳敏), Chao Ye(叶超), Xiang-Ying Wang(王响英), Pei-FangYang(杨培芳), Su Zhang(张苏) Effect of driving frequency on the structure of silicon grown on Ag (111) films by very-high-frequency magnetron sputtering 2017 Chin. Phys. B 26 065207
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