Review of flexible and transparent thin-film transistors based on zinc oxide and related materials

doi:10.1088/1674-1056/26/4/047307

Abstract

Flexible and transparent electronics enters into a new era of electronic technologies. Ubiquitous applications involve wearable electronics, biosensors, flexible transparent displays, radio-frequency identifications (RFIDs), etc. Zinc oxide (ZnO) and relevant materials are the most commonly used inorganic semiconductors in flexible and transparent devices, owing to their high electrical performances, together with low processing temperatures and good optical transparencies. In this paper, we review recent advances in flexible and transparent thin-film transistors (TFTs) based on ZnO and relevant materials. After a brief introduction, the main progress of the preparation of each component (substrate, electrodes, channel and dielectrics) is summarized and discussed. Then, the effect of mechanical bending on electrical performance is highlighted. Finally, we suggest the challenges and opportunities in future investigations.

Keywords: zinc oxide flexible electronics transparent electronics thin-film transistors

Received: 14 September 2016
Revised: 24 January 2017
Accepted manuscript online:

PACS:	73.61.Ga	(II-VI semiconductors)
	85.30.Tv	(Field effect devices)

Fund:

Project supported by the National Natural Science Foundation of China (Grants Nos. 61306011, 11274366, 51272280, 11674405, and 11675280).

Corresponding Authors: Zeng-Xia Mei, Xiao-Long Du
E-mail: zxmei@iphy.ac.cn;xldu@iphy.ac.cn

Cite this article:

Yong-Hui Zhang(张永晖), Zeng-Xia Mei(梅增霞), Hui-Li Liang(梁会力), Xiao-Long Du(杜小龙) Review of flexible and transparent thin-film transistors based on zinc oxide and related materials 2017 Chin. Phys. B 26 047307

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