Low-temperature phase transformation of CZTS thin films

doi:10.1088/1674-1056/26/4/046402

Abstract The low temperature phase transformation in the Cu₂ZnSnS₄ (CZTS) films was investigated by laser annealing and low temperature thermal annealing. The Raman measurements show that a-high-power laser annealing could cause a red shift of the Raman scattering peaks of the kesterite (KS) structure and promotes the formation of the partially disordered kesterite (PD-KS) structure in the CZTS films, and the low-temperature thermal annealing only shifts the Raman scattering peak of KS phase by several wavenumber to low frequency and the broads Raman peaks in the low frequency region. Moreover, the above two processes were reversible. The Raman analyses of the CZTS samples prepared under different process show that the PD-KS structure tends to be found at low temperatures and low sulfur vapor pressures. Our results reveal that the control of the phase structure in CZTS films is feasible by adjusting the preparation process of the films.

Keywords: Cu₂ZnSnS₄ (CZTS) films magnetron sputtering phase transformation

Received: 04 December 2016
Revised: 13 February 2017
Accepted manuscript online:

PACS:	64.60.-i	(General studies of phase transitions)
	81.15.Cd	(Deposition by sputtering)
	88.40.jn	(Thin film Cu-based I-III-VI2 solar cells)

Fund: Project supported by the Natural Science Foundation for Youth Fund of Hebei Province, China (Grant No. A2016201087), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20131301120003), and the National Natural Science Foundation of China (Grant Nos. 11504078 and 61504054).

Corresponding Authors: Wei Yu, Guang-Sheng Fu, Chao Gao
E-mail: yuwei@hbu.edu.cn;fugs@hbu.edu.cn;cgao@ncu.edu.cn

Cite this article:

Wei Zhao(赵蔚), Lin-Yuan Du(杜霖元), Lin-Lin Liu(刘林林), Ya-Li Sun(孙亚利), Zhi-Wei Liu(柳志伟), Xiao-Yun Teng(滕晓云), Juan Xie(谢娟), Kuang Liu(刘匡), Wei Yu(于威), Guang-Sheng Fu(傅广生), Chao Gao(高超) Low-temperature phase transformation of CZTS thin films 2017 Chin. Phys. B 26 046402

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