Graphene resistive random memory–the promising memory device in next generation

doi:10.1088/1674-1056/26/3/038501

Abstract

Graphene-based resistive random access memory (GRRAM) has grasped researchers' attention due to its merits compared with ordinary RRAM. In this paper, we briefly review different types of GRRAMs. These GRRAMs can be divided into two categories: graphene RRAM and graphene oxide (GO)/reduced graphene oxide (rGO) RRAM. Using graphene as the electrode, GRRAM can own many good characteristics, such as low power consumption, higher density, transparency, SET voltage modulation, high uniformity, and so on. Graphene flakes sandwiched between two dielectric layers can lower the SET voltage and achieve multilevel switching. Moreover, the GRRAM with rGO and GO as the dielectric or electrode can be simply fabricated. Flexible and high performance RRAM and GO film can be modified by adding other materials layer or making a composite with polymer, nanoparticle, and 2D materials to further improve the performance. Above all, GRRAM shows huge potential to become the next generation memory.

Keywords: graphene-based resistive random access memory graphene oxide (GO)/reduced graphene oxide (rGO) resistive switching graphene

Received: 30 August 2016
Revised: 05 October 2016
Accepted manuscript online:

PACS:	85.25.Hv	(Superconducting logic elements and memory devices; microelectronic circuits)
	68.65.Pq	(Graphene films)
	88.30.mj	(Composite materials)
	72.80.Vp	(Electronic transport in graphene)

Fund:

Project supported by the National Natural Science Foundation of China (Grant Nos. 61574083 and 61434001), the National Basic Research Program of China (Grant No. 2015CB352101), the National Key Research and Development Program of China (Grant No. 2016YFA0200404), the National Key Project of Science and Technology of China (Grant No. 2011ZX02403-002), Special Fund for Agroscientic Research in the Public Interest of China (Grant No. 201303107), the Independent Research Program of Tsinghua University, China (Grant No. 2014Z01006), and Advanced Sensor and Integrated System Lab of Tsinghua University Graduate School at Shenzhen, China (Grant No. ZDSYS20140509172959969).

Corresponding Authors: Yi Yang, Tian-Ling Ren
E-mail: yiyang@tsinghua.edu.cn;RenTL@tsinghua.edu.cn

Cite this article:

Xue-Feng Wang(王雪峰), Hai-Ming Zhao(赵海明), Yi Yang(杨轶), Tian-Ling Ren(任天令) Graphene resistive random memory–the promising memory device in next generation 2017 Chin. Phys. B 26 038501

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