Topological transport in Dirac electronic systems: A concise review

doi:10.1088/1674-1056/26/3/037301

Abstract

Various novel physical properties have emerged in Dirac electronic systems, especially the topological characters protected by symmetry. Current studies on these systems have been greatly promoted by the intuitive concepts of Berry phase and Berry curvature, which provide precise definitions of the topological phases. In this topical review, transport properties of topological insulator (Bi₂Se₃), topological Dirac semimetal (Cd₃As₂), and topological insulator-graphene heterojunction are presented and discussed. Perspectives about transport properties of two-dimensional topological nontrivial systems, including topological edge transport, topological valley transport, and topological Weyl semimetals, are provided.

Keywords: transport property topological insulator topological semimetal graphene heterostructure

Received: 03 September 2016
Revised: 23 November 2016
Accepted manuscript online:

PACS:	73.50.-h	(Electronic transport phenomena in thin films)
	73.20.Fz	(Weak or Anderson localization)
	71.27.+a	(Strongly correlated electron systems; heavy fermions)
	79.60.Jv	(Interfaces; heterostructures; nanostructures)

Fund:

Project supported by the Ministry of Science and Technology of China (Grant Nos. 2016YFA0300802 and 2013CB934600) and the National Natural Science Foundation of China (Grant Nos. 11274014 and 11234001).

Corresponding Authors: Zhi-Min Liao
E-mail: liaozm@pku.edu.cn

Cite this article:

Hua-Ding Song(宋化鼎), Dian Sheng(盛典), An-Qi Wang(王安琦), Jin-Guang Li(李金光), Da-Peng Yu(俞大鹏), Zhi-Min Liao(廖志敏) Topological transport in Dirac electronic systems: A concise review 2017 Chin. Phys. B 26 037301

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