Nucleation mechanism and morphology evolution of MoS2 flakes grown by chemical vapor deposition

doi:10.1088/1674-1056/26/12/128102

Abstract

We study the nucleation mechanism and morphology evolution of MoS₂ flakes grown by chemical vapor deposition (CVD) on SiO₂/Si substrates with using S and MoO₃ powders. The MoS₂ flake is of monolayer with triangular nucleation, which might arise from the initial MoO_3-x that is deposited on the substrate, and then bonded with S to form MoS₂ flake. The ratio of Mo and S is higher than 1:2 at the beginning with Mo terminated triangular nucleation formed. After that, the morphology of MoS₂ flake evolves from triangle to similar hexagon, then to truncated triangle which is determined by the faster growth speed of Mo termination than that of S termination under the S rich environment. The nucleation density does not increase linearly with the increase of reactant concentration, which could be explained by the two-dimensional nucleation theory.

Keywords: MoS₂ chemical vapor deposition morphology nucleation

Received: 07 June 2017
Revised: 27 August 2017
Accepted manuscript online:

PACS:	81.07.Bc	(Nanocrystalline materials)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	81.10.-h	(Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)

Fund:

Project supported by the National Natural Science Foundation of China for Youths (Grant No. 61504036), the Natural Science Foundation of Hebei Province for Youths, China (Grant No. A2016201087), the Doctoral Fund of the Ministry of Education of China (Grant No. 20131301120003), and the Science and Technology Project of Hebei Province, China (Grant No. 13214315).

Corresponding Authors: Ri-Dong Cong, Guang-Sheng Fu, Guang-Sheng Fu
E-mail: congrd@hbu.edu.cn;fugs@hbu.cn;fugs@hbu.cn

Cite this article:

He-Ju Xu(许贺菊), Jian-Song Mi(米建松), Yun Li(李云), Bin Zhang(张彬), Ri-Dong Cong(丛日东), Guang-Sheng Fu(傅广生), Wei Yu(于威) Nucleation mechanism and morphology evolution of MoS₂ flakes grown by chemical vapor deposition 2017 Chin. Phys. B 26 128102

[1]	Schwierz F 2010 Nat. Nanotechnol. 5 487
[2]	Wang R, Chien H C, Kumar J, Kumar N, Chiu H Y and Zhao H 2014 ACS Appl. Mater. Inter. 6 314
[3]	Wang Q H, Kalantar-Zadeh K, Kis A, Coleman J N and Strano M S 2012 Nat. Nanotechnol. 7 699
[4]	Lancellotti L, Polichetti T, Ricciardella F, Tari O, Gnanapragasam S, Daliento S and Di Francia G 2012 Thin Solid Films 522 390
[5]	Yin Z, Zhu J, He Q, Cao X, Tan C, Chen H, Yan Q and Zhang H 2014 Adv. Energy Mater. 4 1
[6]	Ganatra R and Zhang Q 2014 ACS Nano. 8 4074
[7]	Padilha J E, Peelaers H, Janotti A and Van de Walle C G 2014 Phys. Rev. B 90 205420
[8]	Park J W, So H S, Kim S, Choi S H, Lee H, Lee J, Lee C and Kim Y 2014 J. Appl. Phys. 116 183509
[9]	Radisavljevic B, Radenovic A, Brivio J, Giacometti V and Kis A 2011 Nat. Nano. 6 147
[10]	Lin M W, Liu L, Lan Q, Tan X, Dhindsa K, Zeng P, Naik V M, Cheng M M and Zhou Z 2012 J. Phys. D:Appl. Phys. 45 345102
[11]	Zeng H, Dai J, Yao W, Xiao D and Cui X 2012 Nat. Nanotechnol. 7 490
[12]	Mak K F, He K, Shan J and Heinz T F 2012 Nat. Nanotechnol. 7 494
[13]	Eda G, Yamaguchi H, Voiry D, Fujita T, Chen M and Chhowalla M 2011 Nano Lett. 11 5111
[14]	Coleman J N, Lotya M and O'Neill A 2011 Science 331 568
[15]	Laskar M R, Ma L, Kannappan S, Sung Park P, Krishnamoorthy S, Nath D N, Lu W, Wu Y and Rajan S 2013 Appl. Phys. Lett. 102 252108
[16]	Mann J, Sun D, Ma Q, Chen J R, Preciado E, Ohta T, Diaconescu B, Yamaguchi K, Tran T, Wurch M, Magnone K, Heinz T F, Kellogg G L, Kawakami R and Bartels L 2013 Eur. Phys. J. B 86 226
[17]	Lin Y C, Zhang W, Huang J K, Liu K K, Lee Y H, Liang C T, Chu C W and Li L J 2012 Nanoscale 4 6637
[18]	Wang S, Rong Y, Fan Y, Pacios M, Bhaskaran H, He K and Warner J H 2014 Chem. Mater. 26 6371
[19]	Ji Q, Zhang Y, Zhang Y and Liu Z 2015 Chem Soc Rev. 44 2587
[20]	van der Zannde A M, Huang P Y, chenet D A, Berkelbach T C, You Y, Lee G H, Heinz T F, Reichman D R, Muller D A and Hone J C 2013 Nat. Mater. 12 554
[21]	Shaw J C, Zhou H, Chen Y, Weiss N O, Liu Y, Huang Y and Duan X 2014 Nano Res. 7 511
[22]	Tao J, Chai J, Lu X, Wong L M, Wong T I, Pan J, Xiong Q, Chia D and Wang S 2015 Nanoscale 7 2497
[23]	Korn T, Heydrich S, Hirmer M, Schmutzler J and Schüller C 2011 Appl. Phys. Lett. 99 102109
[24]	Sundaram R S, Engel M, Lombardo A, Krupke R, Ferrari A C, Avouris Ph and Steiner M 2013 Nano Lett. 13 1416
[25]	Liu H, Ansah Antwi K K, Ying J, Chua S and Chi D 2014 Nanotechnology 25 405702
[26]	Mouri S, Miyauchi Y and Matsuda K 2013 Nano Lett. 13 5944
[27]	Splendiani A, Sun L, Zhang Y B, Li T S, Kim J H, Chim C Y, Galli G and Wang F 2010 Nano Lett. 10 1271
[28]	Liang T, Xie S, Huang Z T, Fu W F, Cai Y, Yang X, Chen H Z, Ma X Y, Iwai H, Fujita D, Hanagata N and Xu M S 2016 Adv. Mater. Interfaces 1600687
[29]	Zhang J, Yu H, Chen W, Tian X, Liu D, Cheng M, Xie G, Yang W, Yang R, Bai X, Shi D and Zhang G 2014 ACS Nano 8 6024

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Nucleation mechanism and morphology evolution of MoS2 flakes grown by chemical vapor deposition

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Nucleation mechanism and morphology evolution of MoS₂ flakes grown by chemical vapor deposition