Growth condition optimization and mobility enhancement through inserting AlAs monolayer in the InP-based InxGa1-xAs/In0.52Al0.48As HEMT structures

doi:10.1088/1674-1056/25/9/096801

Abstract

The structure of InP-based In_xGa_1-xAs/In_0.52Al_0.48As pseudomorphic high electron mobility transistor (PHEMT) was optimized in detail. Effects of growth temperature, growth interruption time, Siδ-doping condition, channel thickness and In content, and inserted AlAs monolayer (ML) on the two-dimensional electron gas (2DEG) performance were investigated carefully. It was found that the use of the inserted AlAs monolayer has an enhancement effect on the mobility due to the reduction of interface roughness and the suppression of Si movement. With optimization of the growth parameters, the structures composed of a 10 nm thick In_0.75Ga_0.25As channel layer and a 3 nm thick AlAs/In_0.52Al_0.48As superlattices spacer layer exhibited electron mobilities as high as 12500 cm²·V^-1·s^-1 (300 K) and 53500 cm²·V^-1·s^-1 (77 K) and the corresponding sheet carrier concentrations (N_s) of 2.8×10¹² cm^-2 and 2.9×10¹² cm^-2, respectively. To the best of the authors' knowledge, this is the highest reported room temperature mobility for InP-based HEMTs with a spacer of 3 nm to date.

Keywords: high electron mobility transistor two-dimensional electron gas InP

Received: 11 January 2016
Revised: 09 May 2016
Accepted manuscript online:

PACS:	68.35.bg	(Semiconductors)
	68.35.Ct	(Interface structure and roughness)
	61.66.Dk	(Alloys )

Fund:

Project supported by the National Natural Science Foundation of China (Grant No. 61434006).

Corresponding Authors: Ming Qi
E-mail: mqi@mail.sim.ac.cn

Cite this article:

Shu-Xing Zhou(周书星), Ming Qi(齐鸣), Li-Kun Ai(艾立鹍), An-Huai Xu(徐安怀) Growth condition optimization and mobility enhancement through inserting AlAs monolayer in the InP-based In_xGa_1-xAs/In_0.52Al_0.48As HEMT structures 2016 Chin. Phys. B 25 096801

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Growth condition optimization and mobility enhancement through inserting AlAs monolayer in the InP-based InxGa1-xAs/In0.52Al0.48As HEMT structures

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Growth condition optimization and mobility enhancement through inserting AlAs monolayer in the InP-based In_xGa_1-xAs/In_0.52Al_0.48As HEMT structures