Enhanced energy storage behaviors in free-standing antiferroelectric Pb(Zr0.95Ti0.05)O3 thin membranes

doi:10.1088/1674-1056/25/8/087702

Abstract

Free-standing antiferroelectric Pb(Zr_0.95Ti_0.05)O₃ (PZT(95/5)) thin film is fabricated on 200-nm-thick Pt foil by using pulsed laser deposition. X-ray diffraction patterns indicate that free-standing PZT(95/5) film possesses an a-axis preferred orientation. The critical electric field for the 300-nm-thick free-standing PZT(95/5) film transiting from antiferroelectric to ferroelectric phases is increased to 770 kV/cm, but its saturation polarization remains almost unchanged as compared with that of the substrate-clamped PZT(95/5) film. The energy storage density and energy efficiency of the substrate-clamped PZT(95/5) film are 6.49 J/cm³ and 54.5%, respectively. In contrast, after removing the substrate, the energy storage density and energy efficiency of the free-standing PZT(95/5) film are enhanced up to 17.45 J/cm³ and 67.9%, respectively.

Keywords: antiferroelectric films freestanding energy storage

Received: 23 February 2016
Revised: 11 April 2016
Accepted manuscript online:

PACS:	77.80.-e	(Ferroelectricity and antiferroelectricity)
	68.55.-a	(Thin film structure and morphology)
	84.60.Ve	(Energy storage systems, including capacitor banks)

Fund:

Project supported by the National Natural Science Foundation of China (Grant Nos. 11374312, 51401230, and 51522105) and the Fund for Ningbo Municipal Science and Technology Innovation Team, China (Grant No. 2015B11001).

Corresponding Authors: Run-Wei Li
E-mail: zhanqf@nimte.ac.cn

Cite this article:

Zheng-Hu Zuo(左正笏), Qing-Feng Zhan(詹清峰), Bin Chen(陈斌), Hua-Li Yang(杨华礼), Yi-Wei Liu(刘宜伟), Lu-Ping Liu(刘鲁萍), Ya-Li Xie(谢亚丽), Run-Wei Li(李润伟) Enhanced energy storage behaviors in free-standing antiferroelectric Pb(Zr_0.95Ti_0.05)O₃ thin membranes 2016 Chin. Phys. B 25 087702

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Enhanced energy storage behaviors in free-standing antiferroelectric Pb(Zr0.95Ti0.05)O3 thin membranes

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Enhanced energy storage behaviors in free-standing antiferroelectric Pb(Zr_0.95Ti_0.05)O₃ thin membranes