A novel circuit design for complementary resistive switch-based stateful logic operations

doi:10.1088/1674-1056/25/5/058502

Abstract Recently, it has been demonstrated that memristors can be utilized as logic operations and memory elements. In this paper, we present a novel circuit design for complementary resistive switch (CRS)-based stateful logic operations. The proposed circuit can automatically write the destructive CRS cells back to the original states. In addition, the circuit can be used in massive passive crossbar arrays which can reduce sneak path current greatly. Moreover, the steps for CRS logic operations using our proposed circuit are reduced compared with previous circuit designs. We validate the effectiveness of our scheme through Hspice simulations on the logic circuits.

Keywords: memristor complementary resistive switch crossbar arrays logic circuits

Received: 10 November 2015
Revised: 13 January 2016
Accepted manuscript online:

PACS:	85.35.-p	(Nanoelectronic devices)
	85.25.Hv	(Superconducting logic elements and memory devices; microelectronic circuits)
	87.85.Qr	(Nanotechnologies-design)
	84.32.-y	(Passive circuit components)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61374150 and 11271146), the State Key Program of the National Natural Science Foundation of China (Grant No. 61134012), the Doctoral Fund of Ministry of Education of China (Grant No. 20130142130012), and the Science and Technology Program of Shenzhen City, China (Grant No. JCYJ20140509162710496).

Corresponding Authors: Xiao-Ping Wang
E-mail: wangxiaoping@hust.edu.cn

Cite this article:

Xiao-Ping Wang(王小平), Lin Chen(陈林), Yi Shen(沈轶), Bo-Wen Xu(徐博文) A novel circuit design for complementary resistive switch-based stateful logic operations 2016 Chin. Phys. B 25 058502

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