Charge recombination mechanism to explain the negative capacitance in dye-sensitized solar cells

doi:10.1088/1674-1056/25/3/037307

Abstract Negative capacitance (NC) in dye-sensitized solar cells (DSCs) has been confirmed experimentally. In this work, the recombination behavior of carriers in DSC with semiconductor interface as a carrier's transport layer is explored theoretically in detail. Analytical results indicate that the recombination behavior of carriers could contribute to the NC of DSCs under small signal perturbation. Using this recombination capacitance we propose a novel equivalent circuit to completely explain the negative terminal capacitance. Further analysis based on the recombination complex impedance show that the NC is inversely proportional to frequency. In addition, analytical recombination resistance is composed by the alternating current (AC) recombination resistance (R_rac) and the direct current (DC) recombination resistance (R_rdc), which are caused by small-signal perturbation and the DC bias voltage, respectively. Both of two parts will decrease with increasing bias voltage.

Keywords: dye-sensitized solar-cells (DSCs) negative capacitance (NC) small-signal perturbation carrier's transport

Received: 09 September 2015
Revised: 11 November 2015
Accepted manuscript online:

PACS:	73.40.Lq	(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	85.30.De	(Semiconductor-device characterization, design, and modeling)
	88.40.fc	(Modeling and analysis)
	88.40.H-	(Solar cells (photovoltaics))

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 11204209 and 60876035) and the Natural Science Foundation of Tianjin City, China (Grant No. 13JCZDJC32800).

Corresponding Authors: Lie-Feng Feng
E-mail: fengliefeng@tju.edu.cn

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Lie-Feng Feng(冯列峰), Kun Zhao(赵昆), Hai-Tao Dai(戴海涛), Shu-Guo Wang(王树国), Xiao-Wei Sun(孙小卫) Charge recombination mechanism to explain the negative capacitance in dye-sensitized solar cells 2016 Chin. Phys. B 25 037307

[1]	Iván M S, Juan B, Francisco F S, Germá GB, Guillaume Z, Ken D, Yuri P, IIona O, Abdelhak B, Thomsa D, Ramón T Z, Abou K, Claude L C, Vincent B and Stuart J C I 2006 Nano Lett. 6 640
[2]	Zhang L M, Robert E and Cui D L 2011 J. Phys. Chem. C 116 1293
[3]	Lü G H, Chen H, Wang X Q, Pang H, Zhang G L, Zou B and Lee H J 2010 Chin. Phys. B 19 085202
[4]	Gommans H H P, Kemerink M and Janssen R A J 2005 Phys. Rev. B 72 235204
[5]	Ali B 2015 Chin. Phys. B 24 047205
[6]	Ma W, Zhang F and Meng S 2014 Chin. Phys. B 23 086801
[7]	Hao J Y, Xu Y, Zhang Y P, Chen S F, Qin D, Li X A, Wang L H and Huang W 2015 Chin. Phys. B 24 045201
[8]	Martens H C F, Huiberts J N and Blom P W M 2000 Appl. Phys. Lett. 77 1852
[9]	Hulea I N, Van der Scheer R F J, Brom H B, Langeveld-Voss B M W, Van Dijken A and Brunner K 2003 Appl. Phys. Lett. 83 1246
[10]	Li N, Gao X D, Xie Z T, Sun Z Y, Ding X M and Hou X Y 2011 Chin. Phys. B 20 027306
[11]	Gommans H H P, Kemerink M, Anderson G G and Pijper R M T 2004 Phys. Rev. B 69 155216
[12]	Pingree L S C, Scott B J, Russell M T, Marks T J and Hersam M C 2005 Appl. Phys. Lett. 86 073509
[13]	Feng L F, Li Y, Li D, Hu X D, W Yang, Wang C D and Xing Q Y 2012 Appl. Phys. Lett. 101 233506
[14]	Ehrenfreund E, Lungenschmied C, Dennler G, Neugebauer H and Sariciftci N S 2007 Appl. Phys. Lett. 91 012112
[15]	Germá G B, Antoni M, Eva M B, Juan B, Irati U and Roberto P 2008 Org. Electron. 9 847
[16]	Tina C L, Márcio S G, Francisco F S, Juan B, Paulo R B, Chaiya P, Joseph T H and Tobin J M 2009 J. Phys. Chem. C 113 18385
[17]	Yahia I S, Mansour S A, Hafez H S, Ocakoglu K and Yakuphanoglu F 2012 J. Inorg. Organomet. P 22 1240
[18]	Juan B 2011 Phys. Chem. Chem. Phys. 13 4679
[19]	Juan B and Iván M S 2010 J. Phys. Chem. Lett. 1 450
[20]	Juan B, Francisco F S, Iván M S, Germá G B and Giménez S 2009 J. Phys. Chem. C 113 17278
[21]	Barea E M, Zafer C, Gultekin B, Aydin B, Koyuncu S Icli, S, Francisco F S and Juan B 2010 J. Phys. Chem. C 114 19840
[22]	Huang S Y, Schlichthöri G, Nozik A J, Grätzel M and Frank A J 1997 J. Phys. Chem. B 101 2576
[23]	Juan B 2010 J. Electroan. Chem. 646 43
[24]	Juan A A, Jesús I, Guillén E, Julio V C, Humberto J M R, Gerko O, Laila P and Emilio P 2012 Phys. Chem. Chem. Phys. 14 10285
[25]	Liu C W, Zhou X, Y W J, Wang M T, Qiu Z L, Meng W L, Chen J W, Qi J J and Dong C 2015 Acta Phys. Sin. 64 038804 (in Chinese)
[26]	Gonzalez-Vazquez J P, Juan A A and Juan B 2010 J. Phys. Chem. C 114 8552
[27]	Yang j, Zhao D G, Jiang D S, Liu Z S, Chen P, Li L, Wu L L, Le L C, Li X J, He X G, Wang H, Zhu J J, Zhang S M, Zhang B S and Yang H 2013 Chin. Phys. B 22 098801
[28]	Liu J Y, Song P, Wang F and Wang Y 2015 Chin. Phys. B 24 097801

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Charge recombination mechanism to explain the negative capacitance in dye-sensitized solar cells

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