| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Prev
Next
|
|
|
Fabrication and characterization of the normally-off N-channel lateral 4H-SiC metal-oxide-semiconductor field-effect transistors |
| Qing-Wen Song(宋庆文)1,2, Xiao-Yan Tang(汤晓燕)2, Yan-Jing He(何艳静)2, Guan-Nan Tang(唐冠男)2,Yue-Hu Wang(王悦湖)2, Yi-Meng Zhang(张艺蒙)2, Hui Guo(郭辉)2, Ren-Xu Jia(贾仁需)2,Hong-Liang Lv(吕红亮)2, Yi-Men Zhang(张义门)2, Yu-Ming Zhang(张玉明)2 |
1. School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;
2. Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China |
|
|
|
|
Abstract In this paper, the normally-off N-channel lateral 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFFETs) have been fabricated and characterized. A sandwich-(nitridation-oxidation-nitridation) type process was used to grow the gate dielectric film to obtain high channel mobility. The interface properties of 4H-SiC/SiO2 were examined by the measurement of HF I-V, G-V, and C-V over a range of frequencies. The ideal C-V curve with little hysteresis and the frequency dispersion were observed. As a result, the interface state density near the conduction band edge of 4H-SiC was reduced to 2×1011 eV-1·cm-2, the breakdown field of the grown oxides was about 9.8 MV/cm, the median peak field-effect mobility is about 32.5 cm2·V-1·s-1, and the maximum peak field-effect mobility of 38 cm2· V-1· s-1 was achieved in fabricated lateral 4H-SiC MOSFFETs.
|
Received: 17 September 2015
Revised: 26 October 2015
Accepted manuscript online:
|
|
PACS:
|
73.40.-c
|
(Electronic transport in interface structures)
|
| |
73.40.Qv
|
(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
|
| |
73.61.Le
|
(Other inorganic semiconductors)
|
|
| Fund: Projcet supported by the National Natural Science Foundation of China (Grant Nos. 61404098, 61176070, and 61274079), the Doctoral Fund of Ministry of Education of China (Grant Nos. 20110203110010 and 20130203120017), the National Key Basic Research Program of China (Grant No. 2015CB759600), and the Key Specific Projects of Ministry of Education of China (Grant No. 625010101). |
Corresponding Authors:
Qing-Wen Song, Xiao-Yan Tang
E-mail: qwsong@xidian.edu.cn;xytang@mail.xidian.edu.cn
|
Cite this article:
Qing-Wen Song(宋庆文), Xiao-Yan Tang(汤晓燕), Yan-Jing He(何艳静), Guan-Nan Tang(唐冠男),Yue-Hu Wang(王悦湖), Yi-Meng Zhang(张艺蒙), Hui Guo(郭辉), Ren-Xu Jia(贾仁需),Hong-Liang Lv(吕红亮), Yi-Men Zhang(张义门), Yu-Ming Zhang(张玉明) Fabrication and characterization of the normally-off N-channel lateral 4H-SiC metal-oxide-semiconductor field-effect transistors 2016 Chin. Phys. B 25 037306
|
| [1] |
Liewih H, Dimitrijev S, Weitzel C E, and Harrison H B 2001 IEEE Trans. Electron Devices 48 1711
|
| [2] |
Song Q W, Zhang Y M, Han J S, Tanner P, Dimitrijev S, Zhang Y M, Zhang Y M, Tang X Y and Guo H 2013 Chin. Phys. B 22 027302
|
| [3] |
Tang X Y, Zhang Y M and Zhang Y M 2010 Chin. Phys. B 19 047204
|
| [4] |
Chen F P, Zhang Y M, Zhang Y M, Lu H L and Song Q W 2010 Chin. Phys. B 19 047305
|
| [5] |
Cooper J A, Melloch M R, Singh R, Agarwal A and Palmour J W 2002 IEEE Trans. Electron Devices 49 658
|
| [6] |
Sui Y, Tsuji T and Cooper J A Jr 2005 IEEE Electron Device Lett. 26 255
|
| [7] |
Ryu S H, Krishnaswami S, Hull B, Richmond J, Agarwal A and Hefner A 2006 IEEE International Symposium on Power Semiconductor Devices and IC 1
|
| [8] |
Wang J, Zhao T, Li J, Huang A Q, Callanan R, Husna F and Agarwal A 2008 IEEE Trans. Electron Devices 55 1798
|
| [9] |
Ryu S H, Hull B A, Dhar S, Cheng L, Zhang Q C, Richmond J, Das M K, Agarwal A K, Palmour J W, Lelis A J, Geil B and Scozzie C 2010 Mater. Sci. Forum 645-648 969
|
| [10] |
Howell R, Buchoff S, Campen S V, McNutt T, Ezis A, Nechay B, Kirby C, Sherwin M, Clarke C and Singh R 2008 IEEE Trans. Electron De-vices 55 1807
|
| [11] |
Lee W S, Lin C W, Yang M H, Huang C F, Gong J and Feng Z 2011 IEEE Electron Device Lett. 32 360
|
| [12] |
Tan Y, Kumar M, Sin J K O, Cai J and Lau J 2000 IEEE Electron Device Lett. 21 82
|
| [13] |
Zhang Y, Sheng K, Su M, Zhao J H, Alexandrov P, Li X, Fursin L and Weine M 2008 IEEE Trans. Electron Devices 55 1934
|
| [14] |
Haasmann D, Dimitrijev S, Han J S and Iacopi A 2014 Mater. Sci. Forum 778-780 627
|
| [15] |
Afanas'ev V V, Ciobanu F, Dimitrijev S, Pens G and Stesmans A 2005 Mater. Sci. Forum 483-485 563
|
| [16] |
Wang S, Di Ventra M, Kim S G and Pantelides S T 2001 Phys. Rev. Lett. 86 5946
|
| [17] |
Afanas'ev V V, Ciobanu F, Dimitrijev S, Pensl G and Stesmans A 2004 J. Phys.: Condens. Matter 16 S1839
|
| [18] |
Radtke C, Baumvol I J R, Morais J and Stedile F C 2001 Appl. Phys. Lett. 78 3601
|
| No Suggested Reading articles found! |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
Altmetric
|
|
blogs
Facebook pages
Wikipedia page
Google+ users
|
Online attention
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
View more on Altmetrics
|
|
|
