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Nonlinear radiation response of n-doped indium antimonide and indium arsenide in intense terahertz field |
| Jiao-Li Gong(龚姣丽)1,2,3, Jin-Song Liu(刘劲松)1, Zheng Chu(褚政)1, Zhen-Gang Yang(杨振刚)1, Ke-Jia Wang(王可嘉)1, Jian-Quan Yao(姚建铨)1 |
1 Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China;
2 School of Science, Hubei University of Technology, Wuhan 430068, China;
3 Hubei Collaborative Innovation Center for High-efficient Utilization of Solar Energy, Hubei University of Technology, Wuhan 430068, China |
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Abstract The nonlinear radiation responses of two different n-doped bulk semiconductors: indium antimonide (InSb) and indium arsenide (InAs) in an intense terahertz (THz) field are studied by using the method of ensemble Monte Carlo (EMC) at room temperature. The results show that the radiations of two materials generate about 2-THz periodic regular spectrum distributions under a high field of 100 kV/cm at 1-THz center frequency. The center frequencies are enhanced to about 7 THz in InSb, and only 5 THz in InAs, respectively. The electron valley occupancy and the percentage of new electrons excited by impact ionization are also calculated. We find that the band nonparabolicity and impact ionization promote the generation of nonlinear high frequency radiation, while intervalley scattering has the opposite effect. Moreover, the impact ionization dominates in InSb, while impact ionization and intervalley scattering work together in InAs. These characteristics have potential applications in up-convension of THz wave and THz nonlinear frequency multiplication field.
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Received: 08 April 2016
Revised: 23 June 2016
Accepted manuscript online:
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PACS:
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02.50.Ng
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(Distribution theory and Monte Carlo studies)
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42.65.Re
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(Ultrafast processes; optical pulse generation and pulse compression)
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42.65.Sf
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(Dynamics of nonlinear optical systems; optical instabilities, optical chaos and complexity, and optical spatio-temporal dynamics)
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71.55.Eq
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(III-V semiconductors)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 11574105 and 61177095), the Natural Science Foundation of Hubei Province, China (Grant Nos. 2012FFA074 and 2013BAA002), the Wuhan Municipal Applied Basic Research Project, China (Grant No. 20140101010009), and the Fundamental Research Funds for the Central Universities, China (Grant Nos. 2013KXYQ004 and 2014ZZGH021). |
Corresponding Authors:
Jin-Song Liu
E-mail: jsliu4508@vip.sina.com
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Cite this article:
Jiao-Li Gong(龚姣丽), Jin-Song Liu(刘劲松), Zheng Chu(褚政), Zhen-Gang Yang(杨振刚), Ke-Jia Wang(王可嘉), Jian-Quan Yao(姚建铨) Nonlinear radiation response of n-doped indium antimonide and indium arsenide in intense terahertz field 2016 Chin. Phys. B 25 100203
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