Influence of dry-etching damage on the electrical properties of an AlGaN/GaN Schottky barrier diode with recessed anode

doi:10.1088/1674-1056/24/9/097303

Abstract The influences of dry-etching damage on the electrical properties of an AlGaN/GaN Schottky barrier diode with ICP-recessed anode was investigated for the first time. It was found that the turn-on voltage is decreased with the increase of dry-etching power. Furthermore, the leakage currents in the reverse bias region above pinch-off voltage rise as radio frequency (RF) power increases, while below pinch-off voltage, leakage currents tend to be independent of RF power. Based on detailed current-voltage-temperature (I-V-T) measurements, the barrier height of thermionic-field emission (TFE) from GaN is lowered as RF power increases, which results in early conduction. The increase of leakage current can be explained by Frenkel-Poole (FP) emission that higher dry-etching damage in the sidewall leads to the higher tunneling current, while below pinch-off voltage, the leakage is only related to the AlGaN surface, which is independent of RF power.

Keywords: AlGaN/GaN Schottky barrier diodes recessed anode etching damage tunneling

Received: 03 March 2015
Revised: 13 April 2015
Accepted manuscript online:

PACS:	73.30.+y	(Surface double layers, Schottky barriers, and work functions)
	81.05.Ea	(III-V semiconductors)
	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 51177175 and 61274039), the National Basic Research Program of China (Grant Nos. 2010CB923200 and 2011CB301903), the Ph. D. Programs Foundation of Ministry of Education of China (Grant No. 20110171110021), the International Science and Technology Collaboration Program of China (Grant No. 2012DFG52260), the National High Technology Research and Development Program of China (Grant No. 2014AA032606), the Science and Technology Plan of Guangdong Province, China (Grant No. 2013B010401013), and the Opened Fund of the State Key Laboratory on Integrated Optoelectronics, China (Grant No. IOSKL2014KF17).

Corresponding Authors: Liu Yang
E-mail: liuy69@mail.sysu.edu.cn

Cite this article:

Zhong Jian (钟健), Yao Yao (姚尧), Zheng Yue (郑越), Yang Fan (杨帆), Ni Yi-Qiang (倪毅强), He Zhi-Yuan (贺致远), Shen Zhen (沈震), Zhou Gui-Lin (周桂林), Zhou De-Qiu (周德秋), Wu Zhi-Sheng (吴志盛), Zhang Bai-Jun (张伯君), Liu Yang (刘扬) Influence of dry-etching damage on the electrical properties of an AlGaN/GaN Schottky barrier diode with recessed anode 2015 Chin. Phys. B 24 097303

[1]	Jiang C, Lu H, Chen D J, Ren F F, Zhang R and Zheng Y D 2014 Chin. Phys. B 23 97308
[2]	Tang C, Xie G, Zhang L, Guo Q, Wang T and Sheng K 2013 Chin. Phys. B 22 106107
[3]	Chen W, Wong K Y, Huang W and Chen K J 2008 Appl. Phys. Lett. 92 253501
[4]	Yoshida S, Li J, Ikeda N and Hataya K 2005 Phys. Status Solidi C 2 2602
[5]	Wang Z G, Chen W J, Zhang B and Li Z J 2012 Chin. Phys. Lett. 29 107202
[6]	Tokuda H, Watanabe F, Syahiman A, Kuzuhara M and Fujiwara T 2011 IWPT 2
[7]	Ha M W, Lee S C, Choi Y H, Kim S S, Yun C M and Han M K 2006 Superlattices Microstruct. 40 567
[8]	Treidel E B, Hilt O, Wentzel A, Wuerfl J and Traenkle G 2013 Physica Status Solidi C 10 849
[9]	Yao Y, Zhong J and Zheng Y 2015 Jpn. J. Appl. Phys. 54 011001
[10]	Shul R, McClellan G B and Casalnuovo D J 1996 Appl. Phys. Lett. 69 1119
[11]	Hashizume T, Kotani J and Hasegawa H 2004 Appl. Phys. Lett. 84 4884
[12]	Kotani J, Hasegawa H and Hashizume T 2004 Appl. Surf. Sci. 237 213
[13]	Choi K J, Jang H W and Lee J L 2003 Appl. Phys. Lett. 82 1233
[14]	Lan W H, Huang K C and Huang K F 2006 Solid-State Electron. 50 1677
[15]	Zhang H, Miller E J and Yu E T 2006 J. Appl. Phys. 99 023703

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Influence of dry-etching damage on the electrical properties of an AlGaN/GaN Schottky barrier diode with recessed anode

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