| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Landau level transitions in InAs/AlSb/GaSb quantum wells |
| Wu Xiao-Guang (吴晓光)a, Pang Mi (庞蜜)b |
a State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
b Department of Applied Physics, Xi'an University of Technology, Xi'an 710054, China |
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Abstract The electronic structure of InAs/AlSb/GaSb quantum wells embedded in AlSb barriers and in the presence of a perpendicular magnetic field is studied theoretically within the 14-band k·p approach without making the axial approximation. At zero magnetic field, for a quantum well with a wide InAs layer and a wide GaSb layer, the energy of an electron-like subband can be lower than the energy of hole-like subbands. As the strength of the magnetic field increases, the Landau levels of this electron-like subband grow in energy and intersect the Landau levels of the hole-like subbands. The electron-hole hybridization leads to a series of anti-crossing splittings of the Landau levels. The magnetic field dependence of some dominant transitions is shown with their corresponding initial-states and final-states indicated. The dominant transitions at high fields can be roughly viewed as two spin-split Landau level transitions with many electron-hole hybridization-induced splittings. When the magnetic field is tilted, the electron-like Landau level transitions show additional anti-crossing splittings due to the subband-Landau level coupling.
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Received: 13 March 2015
Revised: 21 April 2015
Accepted manuscript online:
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PACS:
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73.21.Fg
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(Quantum wells)
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78.20.Ls
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(Magneto-optical effects)
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78.30.Fs
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(III-V and II-VI semiconductors)
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78.67.De
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(Quantum wells)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61076092 and 61290303). |
Corresponding Authors:
Wu Xiao-Guang
E-mail: xgwu@red.semi.ac.cn
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Cite this article:
Wu Xiao-Guang (吴晓光), Pang Mi (庞蜜) Landau level transitions in InAs/AlSb/GaSb quantum wells 2015 Chin. Phys. B 24 097301
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